• Title/Summary/Keyword: hspice

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Comparative Analysis and Performance Evaluation of New Low-Power, Low-Noise, High-Speed CMOS LVDS I/O Circuits (저 전력, 저 잡음, 고속 CMOS LVDS I/O 회로에 대한 비교 분석 및 성능 평가)

  • Byun, Young-Yong;Kim, Tae-Woong;Kim, Sam-Dong;Hwang, In-Seok
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.45 no.2
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    • pp.26-36
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    • 2008
  • Due to the differential and low voltage swing, Low Voltage Differential Signaling(LVDS) has been widely used for high speed data transmission with low power consumption. This paper proposes new LVDS I/O interface circuits for more than 1.3 Gb/s operation. The LVDS receiver proposed in this paper utilizes a sense amp for the pre-amp instead of a conventional differential pre-amp. The proposed LVDS allows more than 1.3 Gb/s transmission speed with significantly reduced driver output voltage. Also, in order to further improve the power consumption and noise performance, this paper introduces an inductance impedance matching technique which can eliminate the termination resistor. A new form of unfolded impedance matching method has been developed to accomplish the impedance matching for LVDS receivers with a sense amplifier as well as with a differential amplifier. The proposed LVDS I/O circuits have been extensively simulated using HSPICE based on 0.35um TSMC CMOS technology. The simulation results show improved power gain and transmission rate by ${\sim}12%$ and ${\sim}18%$, respectively.

Accuracy Evaluation of the FinFET RC Compact Parasitic Models through LNA Design (LNA 설계를 통한 FinFET의 RC 기생 압축 모델 정확도 검증)

  • Jeong, SeungIk;Kim, SoYoung
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.11
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    • pp.25-31
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    • 2016
  • Parasitic capacitance and resistance of FinFET transistors are the important components that determine the frequency performance of the circuit. Therefore, the researchers in our group developed more accurate parasitic capacitance and resistance for FinFETs than BSIM-CMG. To verify the RF performance, proposed model was applied to design an LNA that has $S_{21}$ more than 10dB and center frequency more than 60GHz using HSPICE. To verify the accuracy of the proposed model, mixed-mode capability of 3D TCAD simulator Sentaurus was used. $S_{21}$ of LNA was chosen as a reference to estimate the error. $S_{21}$ of proposed model showed 87.5% accuracy compared to that of Sentaurus in 10GHz~100GHz frequency range. The $S_{21}$ accuracy of BSIM-CMG model was 56.5%, so by using the proposed model, the accuracy of the circuit simulator improved by 31%. This results validates the accuracy of the proposed model in RF domain and show that the accuracies of the parasitic capacitance and resistance are critical in accurately predicting the LNA performance.

Analyzing of CDTA using a New Small Signal Equivalent Circuit and Application of LP Filters (새로운 소신호 등가회로를 활용한 CDTA의 해석 및 저역통과 필터설계)

  • Bang, Junho;Song, Je-Ho;Lee, Woo-Choun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.12
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    • pp.7287-7291
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    • 2014
  • A CDTA (current differencing transconductance amplifier) is an active building block for current mode analog signal processing with the advantages of high linearity and a wide frequency bandwidth. In addition, it can generate a stable voltage because all the differencing input current flows to the grounded devices. In this paper, a new small signal equivalent circuit is proposed to analyze a CDTA. The proposed small signal equivalent circuit provides greater precision in analyzing the magnitude and frequency response than its previous counterparts because it considers the parasitic components of the input, internal and output terminal. In addition, observations of the changes made in various devices, such as the resistor (Rz) confirmed that those devices heavily influence the characteristics of CDTA. The designed parameters of the proposed small signal equivalent circuit of the CDTA provides convenience and accuracy in the further design of analog integrated circuits. For verification purposes, a 2.5 MHz low pass filter was designed on the HSPICE simulation program using the proposed small signal equivalent circuit of CDTA.

Design of a 2.5V 300MHz 80dB CMOS VGA Using a New Variable Degeneration Resistor (새로운 가변 Degeneration 저항을 사용한 2.5V 300MHz 80dB CMOS VGA 설계)

  • 권덕기;문요섭;김거성;박종태;유종근
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.673-684
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    • 2003
  • A degenerated differential pair has been widely used as a standard topology for digitally programmable CMOS VGAs. A variable degeneration resistor has been implemented using a resistor string or R-2R ladder with MOSFET switches. However, in the VGAs using these conventional methods, low-voltage and high-speed operation is very hard to achieve due to the dc voltage drop over the degeneration resistor. To overcome this problem a new variable degeneration resistor is proposed where the dc voltage drop is almost removed. Using the proposed gain control scheme, a low-voltage and high-speed CMOS VGA is designed. HSPICE simulation results using a 0.25${\mu}{\textrm}{m}$ CMOS process parameters show that the designed VGA provides a 3dB bandwidth of 360MHz and a 80dB gain control range in 2dB step. Gain errors are less than 0.4dB at 200MHz and less than l.4dB at 300MHz. The designed circuit consumes 10.8mA from a 2.5V supply and its die area is 1190${\mu}{\textrm}{m}$${\times}$360${\mu}{\textrm}{m}$.

A New Structural Carry-out Circuit in Full Adder (새로운 구조의 전가산기 캐리 출력 생성회로)

  • Kim, Young-Woon;Seo, Hae-Jun;Han, Se-Hwan;Cho, Tae-Won
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.12
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    • pp.1-9
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    • 2009
  • A full adders is an important component in applications of digital signal processors and microprocessors. Thus it is imperative to improve the power dissipation and operating speed for designing a full adder. We propose a new adder with modified version of conventional static CMOS and pass transistor logic. The carry-out generation circuit of the proposed full adder is different from the conventional XOR-XNOR structure. The output Cout of module III is generated from input A, B and Cin directly without passing through module I as in conventional structure. Thus output Cout is faster by reducing operation step. The proposed module III uses the static CMOS logic style, which results full-swing operation and good driving capability. The proposed 1bit full adder has the advantages over the conventional static CMOS, CPL, TGA, TFA, HPSC, 14T, and TSAC logic. The delay time is improved by 4.3% comparing to the best value known. PDP(power delay product) is improved by 9.8% comparing to the best value. Simulation has been carried out using a $0.18{\mu}m$ CMOS design rule for simulation purposes. The physical design has been verified using HSPICE.

A 32${\times}$32-b Multiplier Using a New Method to Reduce a Compression Level of Partial Products (부분곱 압축단을 줄인 32${\times}$32 비트 곱셈기)

  • 홍상민;김병민;정인호;조태원
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.6
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    • pp.447-458
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    • 2003
  • A high speed multiplier is essential basic building block for digital signal processors today. Typically iterative algorithms in Signal processing applications are realized which need a large number of multiply, add and accumulate operations. This paper describes a macro block of a parallel structured multiplier which has adopted a 32$\times$32-b regularly structured tree (RST). To improve the speed of the tree part, modified partial product generation method has been devised at architecture level. This reduces the 4 levels of compression stage to 3 levels, and propagation delay in Wallace tree structure by utilizing 4-2 compressor as well. Furthermore, this enables tree part to be combined with four modular block to construct a CSA tree (carry save adder tree). Therefore, combined with four modular block to construct a CSA tree (carry save adder tree). Therefore, multiplier architecture can be regularly laid out with same modules composed of Booth selectors, compressors and Modified Partial Product Generators (MPPG). At the circuit level new Booth selector with less transistors and encoder are proposed. The reduction in the number of transistors in Booth selector has a greater impact on the total transistor count. The transistor count of designed selector is 9 using PTL(Pass Transistor Logic). This reduces the transistor count by 50% as compared with that of the conventional one. The designed multiplier in 0.25${\mu}{\textrm}{m}$ technology, 2.5V, 1-poly and 5-metal CMOS process is simulated by Hspice and Epic. Delay is 4.2㎱ and average power consumes 1.81㎽/MHz. This result is far better than conventional multiplier with equal or better than the best one published.

A Design of Wideband Frequency Synthesizer for Mobile-DTV Applications (Mobile-DTV 응용을 위한 광대역 주파수 합성기의 설계)

  • Moon, Je-Cheol;Moon, Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.40-49
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    • 2008
  • A Frequency synthesizer for mobile-DTV applications is implemented using $0.18{\mu}m$ CMOS process with 1.8V supply. PMOS transistors are chosen for VCO core to reduce phase noise. The measurement result of VCO frequency range is 800MHz-1.67GHz using switchable inductors, capacitors and varactors. We use varactor bias technique for the improvement of VCO gain linearity, and the number of varactor biasing are minimized as two. VCO gain deterioration is also improved by using the varactor switching technique. The VCO gain and interval of VCO gain are maintained as low and improved using the VCO frequency calibration block. The sigma-delta modulator for fractional divider is designed by the co-simualtion method for accuracy and efficiency improvement. The VCO, PFD, CP and LF are verified by Cadence Spectre, and the sigma-delta modulator is simulated using Matlab Simulink, ModelSim and HSPICE. The power consumption of the frequency synthesizer is 18mW, and the VCO has 52.1% tuning range according to the VCO maximum output frequency. The VCO phase noise is lower than -100dBc/Hz at 1MHz at 1MHz offset for 1GHz, 1.5GHz, and 2GHz output frequencies.

Design and Fabrication of 32x32 Foveated CMOS Retina Chip for Edge Detection with Local-Light Adaptation (국소 광적응 기능을 가지는 윤곽검출용 32x32 방사형 CMOS 시각칩의 설계 및 제조)

  • Park, Dae-Sik;Park, Jong-Ho;Kim, Kyung-Moon;Lee, Soo-Kyung;Kim, Hyun-Soo;Kim, Jung-Hwan;Lee, Min-Ho;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.11 no.2
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    • pp.84-92
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    • 2002
  • A $32{\times}32$ pixels foveated (linear-polar) structure retina chip with the function of local-light adaptation for edge detection has been designed and fabricated using CMOS technology. Human retina can detect a wide range of light intensity. In this study, we use the biologically-inspired visual signal processing mechanism that consists of photoreceptors, horizontal cells, and bipolar cells in order to implement the function of edge detection in the retina chip. For a local-light adaptive function, the size of receptive field is changed locally according to the input light intensity. The spatial distribution of sensing pixels in the foveated retina chip has the advantages of selective reduction of image data and good resolution in central part to carry out the elaborate image processing with still enough resolution in the outer parts. The designed chip has been fabricated using standard $0.6\;{\mu}m$ double-poly triple-metal CMOS technology and optimized using HSPICE simulator.

A Novel High-speed CMOS Level-Up/Down Shifter Design for Dynamic-Voltage/Frequency-Scaling Algorithm (Dynamic-Voltage/Frequency-Scaling 알고리즘에서의 다중 인가 전압 조절 시스템 용 High-speed CMOS Level-Up/Down Shifter)

  • Lim Ji-Hoon;Ha Jong-Chan;Wee Jae-Kyung;Moon Gyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.6 s.348
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    • pp.9-17
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    • 2006
  • We proposed a new High-speed CMOS Level Up/Down Shifter circuits that can be used with Dynamic Voltage and Frequency Scaling(DVFS) algorithm, for low power system in the SoC(System-on-Chip). This circuit used to interface between the other voltage levels in each CMOS circuit boundary, or between multiple core voltage levels in a system bus. Proposed circuit have advantage that decrease speed attenuation and duty ratio distortion problems for interface. The level up/down shifter of the proposed circuit designed that operated from multi core voltages$(0.6\sim1.6V)$ to used voltage level for each IP at the 500MHz input frequency The proposed circuit supports level up shifting from the input voltage levels, that are standard I/O voltages 1.8V, 2.5V, 3.3V, to multiple core voltage levels in between of $0.6V\sim1.6V$, that are used internally in the system. And level down shifter reverse operated at 1Ghz input frequency for same condition. Simulations results are shown to verify the proposed function by Hspice simulation, with $0.6V\sim1.6V$ CMOS Process, $0.13{\mu}m$ IBM CMOS Process and $0.65{\mu}m$ CMOS model parameters. Moreover, it is researched delay time, power dissipation and duty ration distortion of the output voltage witch is proportional to the operating frequency for the proposed circuit.

A Novel Design of a Low Power Full Adder (새로운 저전력 전가산기 회로 설계)

  • Kang, Sung-Tae;Park, Seong-Hee;Cho, Kyoung-Rok;You, Young-Gap
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.38 no.3
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    • pp.40-46
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    • 2001
  • In this paper, a novel low power full adder circuit comprising only 10 transistors is proposed. The circuit is based on the six -transistor CMOS XOR circuit, which generates both XOR and XNOR signals and pass transistors. This adder circuit provides a good low power characteristics due to the smaller number of transistors and the elimination of short circuit current paths. Layouts have been carried out using a 0.65 ${\mu}m$ ASIC design rule for evaluation purposes. The physical design has been evaluated using HSPICE at 25MHz to 50MHz. The proposed circuit has been used to build 2bit and 8bit ripple carry adders, which are used for evaluation of power consumption, time delay and rise and fall time. The proposed circuit shows substantially improved power consumption characteristics, about 70% lower than transmission gate full adder (TFA), and 60% lower than a design using 14 transistors (TR14). Delay and signal rise and fall time are also far shorter than other conventional designs such as TFA and TR14.

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