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http://dx.doi.org/10.5573/ieie.2016.53.11.025

Accuracy Evaluation of the FinFET RC Compact Parasitic Models through LNA Design  

Jeong, SeungIk (College of Information and Communication Engineering, Sungkyunkwan University)
Kim, SoYoung (College of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.53, no.11, 2016 , pp. 25-31 More about this Journal
Abstract
Parasitic capacitance and resistance of FinFET transistors are the important components that determine the frequency performance of the circuit. Therefore, the researchers in our group developed more accurate parasitic capacitance and resistance for FinFETs than BSIM-CMG. To verify the RF performance, proposed model was applied to design an LNA that has $S_{21}$ more than 10dB and center frequency more than 60GHz using HSPICE. To verify the accuracy of the proposed model, mixed-mode capability of 3D TCAD simulator Sentaurus was used. $S_{21}$ of LNA was chosen as a reference to estimate the error. $S_{21}$ of proposed model showed 87.5% accuracy compared to that of Sentaurus in 10GHz~100GHz frequency range. The $S_{21}$ accuracy of BSIM-CMG model was 56.5%, so by using the proposed model, the accuracy of the circuit simulator improved by 31%. This results validates the accuracy of the proposed model in RF domain and show that the accuracies of the parasitic capacitance and resistance are critical in accurately predicting the LNA performance.
Keywords
FinFET; Parasitic capacitance; Parasitic resistance; TCAD;
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Times Cited By KSCI : 2  (Citation Analysis)
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