• Journal of Electrochemical Science and Technology
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• 제13권1호
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• pp.100-111
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• 2022

This paper presents a simple and inexpensive method to fabricate chemically and mechanically resistant hot electron-emitting composite electrodes on reusable substrates. In this study, the hot electron emitting composite electrodes were manufactured by doping a polymer, nylon 6,6, with few different brands of carbon particles (graphite, carbon black) and by coating metal substrates with the aforementioned composite ink layers with different carbon-polymer mass fractions. The optimal mass fractions in these composite layers allowed to fabricate composite electrodes that can inject hot electrons into aqueous electrolyte solutions and clearly generate hot electron- induced electrochemiluminescence (HECL). An aromatic terbium (III) chelate was used as a probe that is known not to be excited on the basis of traditional electrochemistry but to be efficiently electrically excited in the presence of hydrated electrons and during injection of hot electrons into aqueous solution. Thus, the presence of hot, pre-hydrated or hydrated electrons at the close vicinity of the composite electrode surface were monitored by HECL. The study shows that the extreme pH conditions could not damage the present composite electrodes. These low-cost, simplified and robust composite electrodes thus demonstrate that they can be used in HECL bioaffinity assays and other applications of hot electron electrochemistry.

• 대한전자공학회논문지SD
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• 제41권7호
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• pp.21-29
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• 2004

본 논문에서는 Dual oxide를 갖는 Nano-scale CMOSFET에서 각 소자의 Hot carrier 특성을 분석하여 두 가지 중요한 결과를 나타내었다. 하나는 NMOSFET Thin/Thick인 경우 CHC stress 보다는 DAHC stress에 의한 소자 열화가 지배적이고, Hot electron이 중요하게 영향을 미치고 있는 반면에, PMOSFET에서는 특히 Hot hole에 의한 영향이 주로 나타나고 있다는 것이다. 다른 하나는, Thick MOSFET인 경우 여전히 NMOSFET의 수명이 PMOSFET의 수명에 비해 작지만, Thin MOSFET에서는 오히려 PMOSFET의 수명이 NMOSFET보다 작다는 것이다. 이러한 분석결과는 Charge pumping current 측정을 통해 간접적으로 확인하였다. 따라서 Nano-scale CMOSFET에서의 NMOSFET보다는 PMOSFET에 대한 Hot camel lifetime 감소에 관심을 기울여야 하며, Hot hole에 대한 연구가 진행되어야 한다고 할 수 있다.

• 전자공학회논문지A
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• 제30A권12호
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• 대한전자공학회논문지SD
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• 제47권1호
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• pp.1-5
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• 2010

본 논문에서는, SONOS 소자에서의 일반적인 CHE(Channel Hot Electron) 주입 방법과 기판 순바이어스를 이용한 새로운 전자 주입 방법의 프로그램 효율성에 대해 직접 비교하였다. 기존의 CHE 주입 방법과 비교해서, 새로운 전자 주입 방법은 낮은 구동전압, 빠른 프로그램 속도 등의 특성을 포함하여 높은 프로그램효율을 보였으며, 또한 드레인 영역에서의 순방향 읽기와 역방향 읽기의 문턱전압 차이가 1 V 가량 발생한다는 점에서 국소 주입 동작이 가능함을 확인하였다. 이렇게 제안된 전자주입 방법은 차세대 나노 크기 멀티-비트 SONOS 소자의 동작에 매우 유용하게 사용될 것으로 기대된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.158-166
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• 2001

Based on uniform hot carrier injection (optically assisted electron injection) across the $Si-SiO_2$ interface into the gate insulator of n-channel IGFETs, the threshold voltage shifts associated with electron injection of $1.25{\times}l0^{16}{\;}e/\textrm{cm}^2 between 0.5 and 7 MV/cm were found to decrease from positive to negative values, indicating both a decrease in trap cross section ($E_{ox}{\geq}1.5 MV/cm$) and the generation of FPC $E_{ox}{\geq}5{\;}MV/cm$). It was also found that FNC and large cross section NETs were generated for $E_{ox}{\geq}5{\;}MV/cm$. Continuous, uniform low-field (1MV/cm) electron injection up to $l0^{19}{\;}e/\textrm{cm}^2 is accompanied by a monatomic increase in threshold voltage. It was found that the data could be modeled more effectively by assuming that most of the threshold voltage shift could be ascribed to generated bulk defects which are generated and filled, or more likely, generated in a charged state. The injection method and conditions used in terms of injection fluence, injection density, and temperature, can have a dramatic impact on what is measured, and may have important implications on accelerated lifetime measurements.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.258-258
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• 2010

In this work, back bias effects in the program of the silicon-oxide-nitride-oxide-silicon (SONOS) cell using two-step pulse sequence, are investigated. Two-step pulse sequence is composed of the forward biases for collecting the electrons at the substrate terminal and back bias for injecting the hot electrons into the nitride layer. With an aid of the back bias for electron injection, we obtain a program time as short as 600 ns and an ultra low-voltage operation with a substrate voltage of -3 V.

• 대한전자공학회논문지
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• 제25권7호
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• pp.780-790
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• 1988

We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.