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PMOSFET Hot Carrier Lifetime Dominated by Hot Hole Injection and Enhanced PMOSFET Degradation than NMOSFET in Nano-Scale CMOSFET Technology  

나준희 (충남대학교 정보통신공학부)
최서윤 (충남대학교 정보통신공학)
김용구 (충남대학교 전자공학)
이희덕 (충남대학교 전자공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.7, 2004 , pp. 21-29 More about this Journal
Abstract
Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology
Keywords
Hot Carrier; Hole trapping; CHC; DAHC; Charge pumping;
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