1 |
MONOS memory cell scalable to 0.1㎛ and beyond
/
[
I.Fujiwara;H.Aozasa;A.Nakamura;Y.Hayashi;T.Kobayashi
] /
IEEE Non-Volatile Semiconductor Memory Workshop
|
2 |
Silicon Processing for the VLSI Era
/
[
S.Wolf
] /
Lattice
|
3 |
NROM : a 2-bit trapping stroage NVM cell, give a real challenge to floating gate cells
/
[
B.Eitan;P.Pavan;I.Boloom;E.Aloni;A.Frommer;D.Finzi
] /
the International Conference on Solid State Devices and Materials
|
4 |
Retention reliability enhanced SONOS NVSM with scaled programming voltage
/
[
J.Bu;M.H.White
] /
IEEE Acrospace Conference Proceedings
|
5 |
High performance SONOS memory cells free of drain turn-on over-erase: compatibility issue with current flash technology
/
[
M.K.Cho;D.M.Kim
] /
IEEE Electron Device Letters
|
6 |
True low-voltage flash memory operations
/
[
M.H.Chi;A.Bergemnont
] /
IEEE International NVM Technology Conference
|
7 |
Characterization of channel got electron injection by the subthreshold slope of NROM™ device
/
[
E.Lusky;Y.Shacham Diamand;I.Bloom
] /
IEEE EDL
DOI
ScienceOn
|