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http://dx.doi.org/10.4313/JKEM.2003.16.9.771

Programming Characteristics of the Multi-bit Devices Based on SONOS Structure  

김주연 (울산과학대학교 전기전자통신학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.9, 2003 , pp. 771-774 More about this Journal
Abstract
In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.
Keywords
Multi-bit; SONOS; CHE injection; Hot Hole injection; Reverse read scheme;
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