• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.359-363
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• 2011

To integrate the sensor driver and logic circuits, fabricating down scaled transistors has been main issue. At this research, short channel effects were analyzed after n channel polycrystalline silicon thin film transistor was fabricated at high temperature. As a result, on current, on/off current ratio and transconductance were increased but threshold voltage, electron mobility and s-slope were reduced with a decrease of channel length. When carriers that develop at grain boundary in activated polycrystalline silicon have no gate biased, on current was increased with punch through by drain current. Also, due to BJT effect (parallel bipolar effect) that developed under region of channel by increase of gate voltage on current was rapidly increased.

• Journal of Power Electronics
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• v.16 no.4
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• pp.1316-1323
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• 2016

Multilevel inverters (MLIs) have been preferred over conventional two-level inverters due to their inherent properties such as reduced harmonic distortion, lower electromagnetic interference, minimal common mode voltage, ability to synthesize medium/high voltage from low voltage sources, etc. On the other hand, they suffer from an increased number of switching devices, complex gate pulse generation, etc. This paper develops an ingenious symmetrical MLI topology, which consumes lesser component count. The proposed level dependent sources concoction multilevel inverter (LDSCMLI) is basically a multilevel dc link MLI (MLDCMLI), which first synthesizes a stepped dc link voltage using a sources concoction module and then realizes the ac waveform through a conventional H-bridge. Seven level and eleven level versions of the proposed topology are simulated in MATLAB r2010b and prototypes are constructed to validate the performance. The proposed topology requires lesser components compared to recent component reduced MLI topologies and the classical topologies. In addition, it requires fewer carrier signals and gate driver circuits.

• Journal of Power Electronics
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• v.15 no.4
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• pp.951-963
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• 2015

In this paper, a new symmetric multilevel inverter is proposed. A simple structure for the cascaded multilevel inverter topology is also proposed, which produces a high number of levels with the application of few power electronic devices. The symmetric multilevel inverter can generate 2n+1 levels with a reduced number of power switches. The basic unit is composed of a single and double source unit (SDS-unit). The application of this SDS-unit is for reducing the number of power electronic components like insulated gate bipolar transistors, freewheeling diodes, gate driver circuits, dc voltage sources, and blocked voltages by switches. Various new algorithms are recommended to determine the magnitude of dc sources in a cascaded structure. Furthermore, the proposed topology is optimized for different goals. The proposed cascaded structure is compared with other similar topologies. For verifying the performance of the proposed basic symmetric and cascaded structure, results from a computer-based MATLAB/Simulink simulation and from experimental hardware are also discussed.

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• Journal of Power Electronics
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• v.16 no.1
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• pp.362-373
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• 2016

The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (u_Ee) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.71-80
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• 1999

In this paper, a power MOSFET driver with protection circuits is designed using a 2${\mu}m$ high-voltage CMOS process. For stable operations of control circuits a power managing circuit is designed, and a voltage-detecting short-circuit protection(VDSCP) is proposed to protect a voltage regulator in the power control circuit. The proposed VDSCP scheme eliminates voltage drop caused by a series resistor, and turns off output current under short-circuit state. To protect a power MOSFET, a short-load protection, a gate-voltage limiter, and an over-voltage protection circuit are also designed A high voltage 2 ${\mu}m$ technology provides the breakdown voltage of 50 V. The driver consumes the power of 20 ~ 100 mW along its operation state excluding the power of the power MOSFET. The active area of the power MOSFET driver occupies $3.5 {\times}2..8mm^2$.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.229-236
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• 2017

This paper deals with the design and implementation of an efficient topology for cascaded multilevel inverters with reduced part counts. In the proposed design, a well-established basic unit is first developed. The series extension of this unit results in the formation of the proposed multilevel inverter. The proposed design minimizes the number of power electronic components including insulated-gate bipolar transistors and gate driver circuits, which in turn cuts down the size of the inverter assembly and reduces the operating power losses. An explicit control strategy with enhanced device efficiency is also acquired. Thus, the part count reductions enhance not only the economical merits but also the technical features of the entire system. In order to accomplish the desired operational aspects, three algorithms are considered to determine the magnitudes of the dc voltage sources effectively. The proposed topology is compared with the conventional cascaded H-bridge multilevel inverter topology, to reflect the merits of the presented structure. In continue, both the analytical and experimental results of a cascaded 31-level structure are analyzed. The obtained results are discussed in depth, and the exemplary performance of the proposed structure is corroborated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.109-116
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• 2014

This paper presents a high-efficiency digital class-D audio amplifier using a composite interpolation filter for portable audio devices. The proposed audio amplifier is composed of an interpolation filter, a delta-sigma modulator, and a class-D output stage. To reduce power consumption, the designed interpolation filter has an optimized composite structure that uses a direct-form symmetric and Lagrange FIR filters. Compared to the filters with homogeneous structures, the hardware cost and complexity are reduced by about half by the optimization. The coefficients of the digital delta-sigma modulator are also optimized for low power consumption. The class-D output stage has gate driver circuits to reduce shoot-through current. The implemented class-D audio amplifier exhibited a high efficiency of 87.8 % with an output power of 57 mW at a load impedance of $16{\Omega}$ and a power supply voltage of 1.8 V. An outstanding signal-to-noise ratio of 90 dB and a total harmonic distortion plus noise of 0.03 % are achieved for a single-tone input signal with a frequency of 1 kHz.

• Journal of Power Electronics
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• v.18 no.2
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• pp.418-431
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• 2018

This paper presents a new asymmetrical multilevel inverter with a reduced number of power electronic components. The proposed multilevel inverter is analyzed using two different configurations: i) First Configuration (with a switched diode) and ii) Second Configuration (without a switched diode). The presented topologies are compared with recent multilevel inverter topologies in terms of number of switches, gate driver circuits and blocking voltages. The proposed topologies can be cascaded to generate the maximum number of output voltage levels and they are suitable for high voltage applications. Various power quality issues are addressed for both of the configurations. The proposed 11-level inverter configuration is simulated using MATLAB and it is validated with a laboratory based experimental setup.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.52-55
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• 2006

The driving-current degradation of a-Si:H thin-film transistor(TFT) device has been analyzed for the first time. A method to analyze the performance of TFT circuits is presented, which is different from the conventional one by threshold voltage shift method. It can be also used to evaluate the performance of gate driver on array (GOA) circuit, which is integrated in a 12.1" WXGA ($1280{\ast}3{\ast}800$) TFT-LCD panel.