• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.17-26
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• 2016

This work proposes a 12b 60MS/s 0.18um CMOS Flash-SAR ADC for various systems such as wireless communications and portable video processing systems. The proposed Flash-SAR ADC alleviates the weakness of a conventional SAR ADC that the operation speed proportionally increases with a resolution by deciding upper 4bits first with a high-speed flash ADC before deciding lower 9bits with a low-power SAR ADC. The proposed ADC removes a sampling-time mismatch by using the C-R DAC in the SAR ADC as the combined sampling network instead of a T/H circuit which restricts a high speed operation. An interpolation technique implemented in the flash ADC halves the required number of pre-amplifiers, while a switched-bias power reduction scheme minimizes the power consumption of the flash ADC during the SAR operation. The TSPC based D-flip flop in the SAR logic for high-speed operation reduces the propagation delay by 55% and the required number of transistors by half compared to the conventional static D-flip flop. The prototype ADC in a 0.18um CMOS demonstrates a measured DNL and INL within 1.33LSB and 1.90LSB, with a maximum SNDR and SFDR of 58.27dB and 69.29dB at 60MS/s, respectively. The ADC occupies an active die area of $0.54mm^2$ and consumes 5.4mW at a 1.8V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.83-92
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• 2004

In this thesis, a modified interpolation-2 6-bit 70MHz ADC is proposed minimizing chip area and power consumption, which includes an error correction circuit. The conventional flash ADC without interpolation comparators suffers from large chip area and more power consumption due to 2n resistors and 2n-1 comparators. Although the flash ADC with interpolation-4 comparators has small area, SNR, INL and DNL are degraded by comparison with the interpolation -2 comparator. We fabricated the proposed 6-bit ADC with interpolation-2 comparators using 0.18${\mu}{\textrm}{m}$ CMOS process. The ADC is composed of 32-resistors, 31 comparators, amplifiers, latches, error correction circuit, thermometer code detector and encoder As the results, power consumption is reduced to 40mW at 3.3V which is saving about 50% than a flash ADC without interpolation comparators, and area is reduced by 20%. SNR is increased by 75% in comparison with that of a flash ADC with interpolation-4 comparators.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.8-8
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• 2004

본 논문에서는 새로운 interpolation-2 방식의 비교기 구조를 제안하여 칩 면적과 전력 소모를 줄이며 오류정정 회로를 내장하는 6-비트 70㎒ ADC를 설계하였다. Interpolation 비교기를 적용하지 않은 flash ADC의 경우 2n개의 저항과 2n -1개의 비교기가 사용되며 이는 저항의 수와 비교기의 수에 비례하여 많은 전력과 큰 면적을 필요로 하고 있다. 또한, interpolation-4 비교기를 적용한 flash ADC는 면적은 작으나 단조도, SNR, INL, DNL 특성이 떨어진다는 단점이 있었다. 본 논문에서 설계한 interpolation-2 방식의 ADC는 저항, 비교기, 앰프, 래치, 오류정정 회로, 온도계코드 디텍터와 인코더로 구성되며, 32개의 저항과 31개의 비교기를 사용하였다. 제안된 회로는 0.18㎛ CMOS 공정으로 제작되어 3.3V에서 40mW의 전력소모로 interpolation 비교기를 적용하지 않은 flash ADC에 비해 50% 개선되었으며, 칩 면적도 20% 감소되었다. 또한 노이즈에 강한 오류정정 회로가 사용되어 interpolation-4 비교기를 적용한 flash ADC 에 비해 SNR이 75% 개선된 결과를 얻었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.436-439
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• 2011

본 논문은 클록 보정회로를 가진 1V 2.56-GS/s 6-bit flash analog-to-digital converter (ADC) 제안한다. 제안하는 ADC 구조에서 아날로그 블록은 단일 T/H와 2단의 프리앰프, 그리고 비교기를 사용된다. 2단의 프리앰프와 비교기의 출력에 옵셋의 크기를 줄이기 위하여 저항 평균화 기법을 적용하였다. 디지털 블록은 quasi-gray rom base 구조를 사용한다. 3입력 voting 회로로 flash ADC에서 발생하기 쉬운 bubble error를 제거하였으며, 고속 동작을 위해 단일 클록을 사용하는 TSPC F/F로 구현한다. 제안하는 flash ADC는 클록 듀티 비를 조절할 수 있는 클록 보정회로를 사용한다. 클록 보정 회로는 비교기 클록 듀티 비를 조절하여 리셋 시간과 evaluation 시간의 비율을 최적화함으로 dynamic 특성을 확보한다. 제안한 flash ADC는 1V 90nm의 CMOS 공정에서 설계되었다. Full power bandwidth인 1.2 GHz 입력에 대하여 ADC 성능을 시뮬레이션을 통해 확인하였다. 설계된 flash ADC의 면적과 전력소모는 각각 $800{\times}400\;{\mu}m^2$와 193.02mW 이다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.9
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• pp.1847-1855
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• 2012

A 1V 1.6-GS/s 6-bit flash analog-to-digital converter (ADC) with a clock calibration circuit is proposed. A single track/hold circuit with a bootstrapped analog switch is used as an input stage with a supply voltage of 1V for the high speed operation. Two preamplifier-arrays and each comparator composed of two-stage are implemented for the reduction of analog noises and high speed operation. The clock calibration circuit in the proposed flash ADC improves the dynamic performance of the entire flash ADC by optimizing the duty cycle and phase of the clock. It adjusts the reset and evaluation time of the clock for the comparator by controlling the duty cycle of the clock. The proposed 1.6-GS/s 6-bit flash ADC is fabricated in a 1V 90nm 1-poly 9-metal CMOS process. The measured SNDR is 32.8 dB for a 800 MHz analog input signal. The measured DNL and INL are +0.38/-0.37 LSB, +0.64/-0.64 LSB, respectively. The power consumption and chip area are $800{\times}500{\mu}m2$ and 193.02mW.

• Journal of Convergence for Information Technology
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• v.11 no.9
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• pp.124-129
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• 2021

A time-interpolation technique has been applied to the conventional FLASH analog-to-digital converter (ADC) to increase a number of quantization level, thus it reduces not only a power dissipation, but also minimize an active chip area. In this work, we demonstrated 5-bit ADC which has 31 quantization levels consisting of 16 conventional voltage-mode comparators and 15 time-mode comparators. As a result, we have achieved about 48.4% voltage-mode comparator reductions. The ADC is fabricated in a 14nm fin Field-effect transistor (FinFET) process with an active die area of 0.0024 mm2 while consuming 0.82 mW through a 0.8 V supply. At 400-MS/s conversion rate, the ADC performs 28.03 dB SNDR (4.36 ENOB) at 21MHz input frequency.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.867-870
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• 1999

In this paper, we designed a 8-bit flash ADC, which can be used in fully differential circuits. We adopted a 2-step flash architecture with digital correction. The designed ADC is expected to work at the sampling frequency of 30MHz. We carried out the layout with 0.65${\mu}{\textrm}{m}$ CMOS technology The core size is 1.587mm$\times$1.069mm.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.4
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• pp.545-552
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• 2011

In this article, reference voltages in a general flash ADC are not obtained from a series of resistors but floating gates. When a behavior model simulation was performed in a pipelined ADC including the suggested flash ADC as a result of an ADC's overall function, it showed results that SNR is approximately 77 dB and resolution is 12 bit. And more than almost 90% showed INL within ${\pm}0.5$ LSB, and like INL, more than 90% showed DNL within ${\pm}0.5$ LSB.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.155-159
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• 2017

The analog-to-digital converter (ADC) is an important component in various fields of sensor signal processing. This paper presents an expandable flash analog-to-digital converter (E-flash ADC) for sensor signal processing using a comparator, a subtractor, and a multiplexer (MUX). The E-flash ADC was simulated and designed in $0.35-{\mu}m$ standard complementary metal-oxide semiconductor (CMOS) technology. For operating the E-flash ADC, input voltage is supplied to the inputs of the comparator and subtractor. When the input voltage is lower than the reference voltage, it is outputted through the MUX in its original form. When it is higher than the reference voltage, the reference voltage is subtracted from the input value and the resulting voltage is outputted through the MUX. Operation of the MUX is determined by the output of the comparator. Further, the output of the comparator is a digital code. The E-flash ADC can be expanded easily.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.695-702
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• 2015

A 1-V 1.6-GS/s 5.58-ENOB flash ADC with a high-speed time-domain comparator is proposed. The proposed time-domain comparator, which consumes low power, improves the comparison capability in high-speed operations and results in the removal of preamplifiers from the first-stage of the flash ADC. The time interpolation with two factors, implemented using the proposed time-domain comparator array and SR latch array, reduces the area and power consumption. The proposed flash ADC has been implemented using a 65-nm 1-poly 8-metal CMOS process with a 1-V supply voltage. The measured DNL and INL are 0.28 and 0.41 LSB, respectively. The SNDR is measured to be 35.37 dB at the Nyquist frequency. The FoM and chip area of the flash ADC are 0.38 pJ/c-s and $620{\times}340{\mu}m^2$, respectively.