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http://dx.doi.org/10.13067/JKIECS.2011.6.4.545

Development of a Flash ADC with an Analog Memory  

Chai, Yong-Yoong (계명대학교 전자공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.6, no.4, 2011 , pp. 545-552 More about this Journal
Abstract
In this article, reference voltages in a general flash ADC are not obtained from a series of resistors but floating gates. When a behavior model simulation was performed in a pipelined ADC including the suggested flash ADC as a result of an ADC's overall function, it showed results that SNR is approximately 77 dB and resolution is 12 bit. And more than almost 90% showed INL within ${\pm}0.5$ LSB, and like INL, more than 90% showed DNL within ${\pm}0.5$ LSB.
Keywords
Analog Memory; ADC; resistor array; floating gate; flash memory;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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