• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.552-552
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• 2012

We fabricated reduced graphene oxide field-effect transistor (RGO-FET) on glass for highly sensitive temperature and IR detection. The device has the channels of RGO responsive to physical stimuli such as temperature and IR. The RGO sensing layers are fabricated from exfoliated graphene oxide sheets that are deposited to form a thin continuous network by electrostatic assembly. These graphene oxide networks are reduced toward reduce graphene oxide by exposure to a hydrazine hydrate vapor. To improve performance and eliminate interferences from oxygen and water vapor absorption to electrical properties of RGO-FET, the sensor devices were encapsulated by the tetratetracontane layer after annealing treatment. The device with encapsulation layer showed lower hysteresis, improved stability, and better repeatability. The temperature response of RGO-FET is examined by measuring changing the temperature, the device exhibited the high sensitivity and repeatability even with the temperature interval of 1 K. We also demonstrated that our devices have capability of IR sensing.

• Particle and aerosol research
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• v.5 no.3
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• pp.123-131
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• 2009

This paper presents simulation results of particle transport in low-pressure, low-temperature plasma environment. The size dependent transport of particles in the plasma is investigated with a two-dimensional simulation tool developed in-house for plasma chamber analysis and design. The plasma model consists of the first two and three moments of the Boltzmann equation for ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The particle transport model takes into account all important factors, such as gravitational, electrostatic, ion drag, neutral drag and Brownian forces, affecting the motion of particles in the plasma environment. The particle transport model coupled with both neutral fluid and plasma models is simulated through a Lagrangian approach tracking the individual trajectory of each particle by taking a force balance on the particle. The size dependant trap locations of particles ranging from a few nm to a few ${\mu}m$ are identified in both electropositive and electronegative plasmas. The simulation results show that particles are trapped at locations where the forces acting on them balance. While fine particles tend to be trapped in the bulk, large particles accumulate near bottom sheath boundaries and around material interfaces, such as wafer and electrode edges where a sudden change in electric field occurs. Overall, small particles form a "dome" shape around the center of the plasma reactor and are also trapped in a "ring" near the radial sheath boundaries, while larger particles accumulate only in the "ring". These simulation results are qualitatively in good agreement with experimental observation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.278-286
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• 2011

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

• Korean Journal of Optics and Photonics
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• v.19 no.5
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• pp.365-369
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• 2008

The optimal condition for focusing an electron beam was investigated employing an electrostatic deflector in a low voltage micro-column. At fixed voltage of the electron emission tip, the focusing electron beam with source lens showed a larger scan field size and poorer visibility than those with an Einzel lens. Theoretical 3-D simulation indicated that a focusing electron beam with a source lens should have a larger spot size and deflection than those of a focusing Einzel lens.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2617-2620
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• 2009

Using Coulomb-Yukawa like correlated interaction potentials of integer and noninteger indices the series expansion formulae in terms of multicenter overlap integrals of three complete orthonormal sets of ${\psi}^{\alpha}$‒exponential type orbitals and linear combination coefficients of molecular orbitals are established for the potential of electrostatic field produced by the charges of molecule, where $\alpha$ = 1, 0, ‒1, ‒2,${\cdots}$. The formulae obtained can be useful for the study of interaction between atomic--molecular systems containing any number of closed and open shells when the ${\psi}^{\alpha}$‒exponential type basis functions and Coulomb-Yukawa like correlated interaction potentials are used in the Hartree-Fock-Roothaan and explicitly correlated approximations. The final results are valid for the arbitrary values of parameters of correlated interaction potentials and orbitals. As an example of application, the calculations have been performed for the potential energy of interaction between electron and molecule $H_2O$ using combined Hartree-Fock-Roothaan equations suggested by the author.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1620-1622
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• 2003

Recently, as the technology for the development of high voltage power apparatus using SF6 gas has made remarkable progress, it became possible to develop more compact power apparatus adopting single body substation system. In these gas insulated power apparatus, it is impossible to achieve perfect and safe insulation using only SF6 gas, because some solid insulation parts should be installed to support current-carrying conductor parts for electrical and mechanical safety. When spacers were installed in SF6 gas insulation system, they were exposed to severe electrical intensification which could reduce system insulation performance and restrict the rated operating voltage So, it is necessary to clarify the dielectric characteristics of spacers by analytically and experimentally, in order to design and develop more compact and optimum gas insulated systems. In this paper, the field distribution of three-phase spacers were investigated using three dimensional electrostatic field analysis tool adopting BEM method. And the obtained results were compared to the conventional two dimensional computations. According to these three dimensional calculations, it was possible to find out weak points in the spacer more clearly and these results could be applied to design more compact and optimum three phase spacer developments.

• Korean Chemical Engineering Research
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• v.62 no.3
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• pp.269-273
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• 2024

The normal stress of TiO₂ ER fluid under an electric field showed negative values due to the electrostatic attraction force in the normal direction between particles and the absolute value increased dramatically with electric field strengths. The normal yield stress exhibited E² dependence similar to the dynamic yield stress, indicating that normal stress can be utilized for evaluating the ER effect. Numerical simulation demonstrated good qualitative agreement with the experimental data and suggested that the decrease in the absolute value of normal stress with increasing shear rates was attributed to the rearrangement of particle configurations under shear.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.4
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• pp.445-449
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• 2005

Present study was designed to evaluate the practical application of triethyl amine(TEA) injection for improving the collection efficiency of electrostatic precipitator(ESP) connected to a real operating plant. The major fuels used at the domestic power stations were bituminous coals imported from Australia, China, South Africa, and USA. Although the values of the electric resistance would be more or less different according to the type of the coals used, the unique electric resistance values of fly ash from the coals were mostly higher than $1{\times}10^{12}\;{\Omega}-cm$ and therefore, back corona problems were always expected to occur in the electrostatic precipitator. The particulates concentrations, smoke concentrations and their electric resistivity measured at the outlet of ESP, and the inspection of collection indicated that the injection of TEA improved the collection efficiency of particulate at collection plates of ESP. The electric resistance for, fly ash with the injection concentration of TEA 15 ppm(Purity 99.7%) was lowered to $2.1{\times}10^{11}\;{\Omega}-cm$ after injection from $1.9{\times}10^{12}\;{\Omega}-cm$ before injection. Under this condition, the dust emission content at the stack was reduced to approximately 80%, lowering the average outlet concentrations of particulates from $70\;mg/Sm^3$ to $14\;mg/Sm^3$.

• Journal of the Korean Chemical Society
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• v.56 no.2
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• pp.195-200
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• 2012

In this study we present a new approach for computing the partial atomic charge derived from the wavefunctions of molecules. This charge, which we call the "y_charge", was calculated by taking into account the energy level and orbital populations in each molecular orbital (MO). The charge calculations were performed in the software, which was developed by us, developed using the C# programming language. Partial atomic charges cannot be calculated directly from quantum mechanics. According to a partitioning function, the electron density of constituent molecular atoms depends on the electrostatic attraction field of the nucleus. Taking into account the Boltzmann population of each MO as a function of its energy and temperature we obtain a formula of partial charges.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.455-459
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• 2004

Electrostatic discharge(ESD) is a serious reliability concern. It causes approximately most of all field failures of integrated circuits. Inevitably, future IC technologies will shrink the dimensions of interconnects, gate oxides, and junction depths, causing ICs to be increasingly susceptible to ESD-induced damage [1][2][3]. This thesis shows the optimization of the ESD protection circuit based on the tested results of MM (Machine Model) and HBM (Human Body Model), regardless of existing Reference in fully silicided 0.18 um CMOS process. His thesis found that, by the formation of silicide in a source and drain contact, the dimensions around the contact had a less influence on the ESD robustness and the channel width had a large influence on the ESD robustness [8].