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http://dx.doi.org/10.5573/JSTS.2011.11.4.278

A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors  

Kim, Ji-Hyun (Department of Electronics Engineering Ewha Womans University)
Sun, Woo-Kyung (Department of Electronics Engineering Ewha Womans University)
Park, Seung-Hye (Department of Electronics Engineering Ewha Womans University)
Lim, Hye-In (Department of Electronics Engineering Ewha Womans University)
Shin, Hyung-Soon (Department of Electronics Engineering Ewha Womans University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.11, no.4, 2011 , pp. 278-286 More about this Journal
Abstract
In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.
Keywords
MOSFET; gate voltage; quantum effect; short channel; surrounding gate; Poisson;
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1 J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki, "Quantum- Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates," NSTI nanotech, Vol.2, pp.163-166, 2004.
2 S. Mohammadi and A. Afzali-Kusha, " A Surface Field Based Model for Ultra Thin Body Undoped Symmetric DG MOSFETs," 10th IEEE Int. Conf. on ULIS, pp.357-361, Mar., 2009.
3 J. Davies (1998), The physics of low dimensional semiconductors: an Introduction, Cambridge University Press.
4 K. Lee, J. Choi, S. Sim and C. Kim, "Physical Understanding of Low-Field Carrier Mobility in Silicon MOSFET Inversion Layer," IEEE Trans. Electron. Devices, Vol.38, No.8, pp.1905-1912, 1991.   DOI   ScienceOn
5 F. Stern, "Self-Consistent Result for n-type Si Inversion Layer," Phys. Review B, Vol.5, No.12, pp.4891-4899, 1972.   DOI
6 S. Takagi, A. Toriumi, M. Iwase and H. Tango, "On the Universality of Inversion Layer Mobility in Si MOSFET's: PartⅡ- Effects of Surface Orientation," IEEE Trans. Electron. Devices, Vol.41, No.12, pp.2363-2368, 1994.   DOI   ScienceOn
7 Y. Chen and J. Luo, "A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using An Analytical Model," Proc. Int. Conf. Modeling Simulation of Microsystems, Vol.1, pp.546-549, 2001.
8 D. Jimenez and B. Inguiez, "Continuous analytic IV model for surrounding-gate MOSFETs," IEEE Electron Device Lett., Vol.25, No.8, pp.571-573, 2004.   DOI   ScienceOn
9 B. Iniguez, D. Jimenez, J. Roig, H.-A. Hamidi, L. F. Marsal and J. Pallares, "Explicit continuous model for long-channel undoped surrounding-gate MOSFETs," IEEE Trans. Electron. Devices, Vol.52, No.8, pp.1868-1873, 2005.   DOI   ScienceOn
10 H. A. E. Hamid, B. Iniguez and J. R. Guitart, "Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate- All-Around-Based MOSFETs," IEEE Electron Device, Vol.54, No.3, pp.572-579, 2007.   DOI   ScienceOn
11 A. Aouaj, A. Bouziane and A. Nouacry, "Analytical 2D modelling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET", International Journal of Electronics, Vol.92, No.8, pp.437-443, 2005.   DOI   ScienceOn
12 C. Suh, "Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET," J. Semi. Tech. and Sci., Vol.11, No.2, pp.111-120, 2011.   DOI   ScienceOn
13 A. Tsormpatzoglou, D. H. Tassis, C. A. Dimitriadis, G. Ghibaudo, G. Pananakakis and R. Clerc, "A compact drain current model of short-channel cylindrical gate-all-around MOSFETs," Semicond. Sci. Technol., Vol.24, No.7, pp.075017, 2009.   DOI   ScienceOn
14 A. Kranti, S. Haldar, R. S. Gupta, "Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/ surrounding gate MOSFET", Microelectronic Engineering, Vol.56, No.3-4. , pp.241-259, 2001.
15 Y. Yuan, B. Yu, J. Song and Y. Taur, "An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass", Solid State elec., Vol.53, No.2, pp.140-144, 2009.   DOI   ScienceOn
16 A. Son, J. Kim, N. Jeong, J. Choi and H. Shin, "Improved Explicit current-Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor," J. J. Appl. Phys., Vol.48, pp.412-413, 2009.   DOI
17 J. He, F. Liu, W. Bian, J. Feng, J. Zhang and X. Zhang, "An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body," Semicond. Sci. and Technol., Vol.22, No.6, pp.671-677, 2007.   DOI   ScienceOn