JSTS:Journal of Semiconductor Technology and Science

  • 제11권4호
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  • Pages.278-286
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  • 2011
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

  • Kim, Ji-Hyun (Department of Electronics Engineering Ewha Womans University) ;
  • Sun, Woo-Kyung (Department of Electronics Engineering Ewha Womans University) ;
  • Park, Seung-Hye (Department of Electronics Engineering Ewha Womans University) ;
  • Lim, Hye-In (Department of Electronics Engineering Ewha Womans University) ;
  • Shin, Hyung-Soon (Department of Electronics Engineering Ewha Womans University)
  • 투고 : 2011.07.26
  • 발행 : 2011.12.31
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초록

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

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참고문헌

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