• Title/Summary/Keyword: clock recovery circuit

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A COMOS Oversampling Data Recovery Circuit With the Vernier Delay Generation Technique

  • Jun-Young Park
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.10A
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    • pp.1590-1597
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    • 2000
  • This paper describes a CMOS data recovery circuit using oversampling technique. Digital oversampling is done using a delay locked loop circuit locked to multiple clock periods. The delay locked loop circuit generates the vernier delay resolution less than the gate delay of the delay chain. The transition and non-transition counting algorithm for 4x oversampling was implemented for data recovery and verified through FPGA. The chip has been fabricated with 0.6um CMOS technology and measured results are presented.

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A 2.496 Gb/s Reference-less Dual Loop Clock and Data Recovery Circuit for MIPI M-PHY (2.496Gb/s MIPI M-PHY를 위한 기준 클록이 없는 이중 루프 클록 데이터 복원 회로)

  • Kim, Yeong-Woong;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.5
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    • pp.899-905
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    • 2017
  • This paper presents a reference-less dual loop clock and data recovery (CDR) circuit that supports a data rate of 2.496 Gb/s for the mobile industry processor interface (MIPI) M-PHY. An adaptive loop bandwidth scheme is used to implement the fast lock time maintaining a low time jitter. To this scheme, the proposed CDR consists of two loops for a frequency locked loop and a phase locked loop. The proposed 2.496 Gb/s reference-less dual loop CDR is designed using a 65 nm CMOS process with 1.2 V supply voltage. The simulated peak-to-peak jitter of output clock is 9.26 ps for the input data of 2.496 Gb/s pseudo-random binary sequence (PRBS) 15. The active area and power consumption of the implemented CDR are $470{\times}400{\mu}m^2$ and 6.49 mW, respectively.

3.125Gbps Reference-less Clock/Data Recovery using 4X Oversampling (레퍼런스 클록이 없는 3.125Gbps 4X 오버샘플링 클록/데이터 복원 회로)

  • Lee, Sung-Sop;Kang, Jin-Ku
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.10 s.352
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    • pp.28-33
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    • 2006
  • An integrated 3.125Gbps clock and data recovery (CDR) circuit is presented. The circuit does not need a reference clock. It has a phase and frequency detector (PFD), which incorporates a bang-bang type 4X oversampling PD and a rotational frequency detector (FD). It also has a ring oscillator type VCO with four delay stages and three zero-offset charge pumps. With a proposed PD and m, the tracking range of 24% can be achieved. Experimental results show that the circuit is capable of recovering clock and data at rates of 3.125Gbps with 0.18 um CMOS technology. The measured recovered clock jitter (p-p) is about 14ps. The CDR has 1.8volt single power supply. The power dissipation is about 140mW.

Design and Characterization of a 10 Gb/s Clock and Data Recovery Circuit Implemented with Phase-Locked Loop

  • Song, Jae-Ho;Yoo, Tae-Whan;Ko, Jeong-Hoon;Park, Chang-Soo;Kim, Jae-Keun
    • ETRI Journal
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    • v.21 no.3
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    • pp.1-5
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    • 1999
  • A clock and data recovery circuit with a phase-locked loop for 10 Gb/s optical transmission system was realized in a hybrid IC form. The quadri-correlation architecture is used for frequency-and phase-locked loop. A NRZ-to-PRZ converter and a 360 degree analogue phase shifter are included in the circuit. The jitter characteristics satisfy the recommendations of ITU-T. The capture range of 150 MHz and input voltage sensitivity of 100 mVp-p were showed. The temperature compensation characteristics were tested for the operating temperature from -10 to $60^{\circ}C$ and showed no increase of error. This circuit was adopted for the 10 Gb/s transmission system through a normal single-mode fiber with the length of 400 km and operated successfully.

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40Gb/s Clock and Data Recovery Circuit with Multi-phase LC PLL in CMOS $0.18{\mu}m$ (LC형 다중 위상 PLL 이용한 40Gb/s $0.18{\mu}m$ CMOS 클록 및 데이터 복원 회로)

  • Ha, Gi-Hyeok;Lee, Jung-Yong;Kang, Jin-Ku
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.4
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    • pp.36-42
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    • 2008
  • 40Gb/s CMOS Clock and Data Recovery circuit design for optical serial link is proposed. The circuit generates 8 multiphase clock using LC tank PLL and controls the phase between the clock and the data using the $2{\times}$ oversampling Bang-Bang PD. 40Gb/s input data is 1:4 demultiplexed and recovered to 4 channel 10Gb/s outputs. The design was progressed to separate the analog power and the digital power. The area of the chip is $2.8{\times}2.4mm^2$ for the inductors and the power dissipation is about 200mW. The chip has been fabricated using 0.18um CMOS process. The measured results show that the chip recovers the data up to 9.5Gb/s per channel(Equivalent to serial input rate of up to 38Gb/s).

All optical clock recovery from 10 Gb/s RZ signal using an actively mode-locked figure eight laser incorporating a SLALOM (반도체 광증폭기 루프 거울을 포함한 8자형 레이저를 이용한 10Gb/s RZ 신호의 전광 클럭 추출)

  • 정희상;주무정;김광준;이종현
    • Korean Journal of Optics and Photonics
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    • v.11 no.6
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    • pp.400-404
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    • 2000
  • All-optical clock recovery from a 10 Gb/s RZ signal has been demonstrated using an actively mode-locked figure-eight laser incorporating a semiconductor optical amplifier in the loop-mirror scheme. Optical pulses with 10 ps pulse width were modulated by a LiNb03 external modulator at $2^{23}-1$ PRES and injected into the clock recovery circuit to extract optical pulses with 12 ps width. Regeneration of the original bit pattern has been accomplished by modulating the recovered clock with the same modulator, and no power penalty was observed at $10^{11}$..

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A 3.2Gb/s Clock and Data Recovery Circuit without Reference Clock for Serial Data Communication (시리얼 데이터 통신을 위한 기준 클록이 없는 3.2Gb/s 클록 데이터 복원회로)

  • Kim, Kang-Jik;Jung, Ki-Sang;Cho, Seong-Ik
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.46 no.2
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    • pp.72-77
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    • 2009
  • In this paper, a 3.2Gb/s clock and data recovery (CDR) circuit for a high-speed serial data communication without the reference clock is described This CDR circuit consists of 5 parts as Phase and frequency detector(PD and FD), multi-phase Voltage Controlled-Oscillator(VCO), Charge-pumps (CP) and external Loop-Filter(KF). It is adapted the PD and FD, which incorporates a half-rate bang-bang type oversampling PD and a half-rate FD that can improve pull-in range. The VCO consists of four fully differential delay cells with rail-to-rail current bias scheme that can increase the tuning range and tuning linearity. Each delay cell has output buffers as a full-swing generator and a duty-cycle mismatch compensation. This materialized CDR can achieve wide pull-in range without an extra reference clock and it can be also reduced chip area and power consumption effectively because there is no additional Phase Locked- Loop(PLL) for generating reference clock. The CDR circuit was designed for fabrication using 0.18um 1P6M CMOS process and total chip area excepted LF is $1{\times}1mm^2$. The pk-pk jitter of recovered clock is 26ps at 3.2Gb/s input data rate and total power consumes 63mW from 1.8V supply voltage according to simulation results. According to test result, the pk-pk jitter of recovered clock is 55ps at the same input data-rate and the reliable range of input data-rate is about from 2.4Gb/s to 3.4Gb/s.

A Clock-Data Recovery using a 1/8-Rate Phase Detector (1/8-Rate Phase Detector를 이용한 클록-데이터 복원회로)

  • Bae, Chang-Hyun;Yoo, Changsik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.1
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    • pp.97-103
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    • 2014
  • In this paper, a clock-data recovery using a 1/8-rate phase detector is proposed. The use of a conventional full or half-rate phase detector requires relatively higher frequency of a recovered clock, which is a burden on the design of a sampling circuit and a VCO. In this paper, a 1/8-rate phase detector is used to lower the frequency of the recovered clock and a linear equalizer is used as a input circuit of a phase detector to reduce the jitter of the recovered clock. A test chip fabricated in a 0.13-${\mu}m$ CMOS process is measured at 1.5-GHz for a 3-Gb/s PRBS input and 1.2-V power supply.

A 0.9-V human body communication receiver using a dummy electrode and clock phase inversion scheme

  • Oh, Kwang-Il;Kim, Sung-Eun;Kang, Taewook;Kim, Hyuk;Lim, In-Gi;Park, Mi-Jeong;Lee, Jae-Jin;Park, Hyung-Il
    • ETRI Journal
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    • v.44 no.5
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    • pp.859-874
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    • 2022
  • This paper presents a low-power and lightweight human body communication (HBC) receiver with an embedded dummy electrode for improved signal acquisition. The clock data recovery (CDR) circuit in the receiver operates with a low supply voltage and utilizes a clock phase inversion scheme. The receiver is equipped with a main electrode and dummy electrode that strengthen the capacitive-coupled signal at the receiver frontend. The receiver CDR circuit exploits a clock inversion scheme to allow 0.9-V operation while achieving a shorter lock time than at 3.3-V operation. In experiments, a receiver chip fabricated using 130-nm complementary metal-oxide-semiconductor technology was demonstrated to successfully receive the transmitted signal when the transmitter and receiver are placed separately on each hand of the user while consuming only 4.98 mW at a 0.9-V supply voltage.

A 1.7 Gbps DLL-Based Clock Data Recovery for a Serial Display Interface in 0.35-${\mu}m$ CMOS

  • Moon, Yong-Hwan;Kim, Sang-Ho;Kim, Tae-Ho;Park, Hyung-Min;Kang, Jin-Ku
    • ETRI Journal
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    • v.34 no.1
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    • pp.35-43
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    • 2012
  • This paper presents a delay-locked-loop-based clock and data recovery (CDR) circuit design with a nB(n+2)B data formatting scheme for a high-speed serial display interface. The nB(n+2)B data is formatted by inserting a '01' clock information pattern in every piece of N-bit data. The proposed CDR recovers clock and data in 1:10 demultiplexed form without an external reference clock. To validate the feasibility of the scheme, a 1.7-Gbps CDR based on the proposed scheme is designed, simulated, and fabricated. Input data patterns were formatted as 10B12B for a high-performance display interface. The proposed CDR consumes approximately 8 mA under a 3.3-V power supply using a 0.35-${\mu}m$ CMOS process and the measured peak-to-peak jitter of the recovered clock is 44 ps.