• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.664-668
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• 2002

In this work, the catalytic reduction mechanisms of NO over ACFs/copper prepared by electrolytic copper plating has been studied. It was found that copper content on carbon surfaces increased with increasing the plating time. However, a slightly gradual decrease of adsorption properties, such as, BET specific surface area, was observed in increasing the plating times within the range of well-developed micropore structures. As experimental results, nitric oxide was converted into the nitrogen and oxygen on ACFs and ACFs/copper catalyst surfaces at $500^{\circ}C$. Especially, the surfaces of ACFs/copper catalyst were found to scavenge the oxygen released by catalytic reduction of NO, which could be explained by the presence of another nitric oxide reduction mechanism between ACFs and ACFs/copper catalysts.

• Polymer(Korea)
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• v.39 no.2
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• pp.235-239
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• 2015

In this work, we evaluated catalytic activity of LiOH, $Cu(acac)_2$ and n-butyltin hydroxide oxide hydrate in the early stage of the melt transesterification of isosorbide and bisphenol A as diol monomers and diphenylcarbonate for the melt polymerizaiton of polycarbonate. $Cu(acac)_2$ proved to be the most active catalyst for homopolymerization process, while the catalytic activity of LiOH was higher than the others in case of melt copolymerization depending on the catalytic mechanism and chemical structure of catalyst. We suggested that evaluation of catalytic activity can be used for selection of catalyst system in bio-based copolymerization of polycarbonate.

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.401-406
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• 2015

Getter is a class of materials used in absorbing gases such as hydrogen and moisture in microelectronics or semiconductor devices to operate properly. In this study, we developed a new device structure consisting of porous anodized alumina films on textured silicon wafer, which have cost efficiency in materials and processing aspects. Anodic aluminum oxide (AAO) with controlled pore sizes can be applied to a high-efficiency moisture absorber due to the high surface area and OH- saturated surface property. The moisture sorption capacity was 2.02% (RH=35%), obtained by analyzing isothermal adsorption/desorption curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.533-533
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• 2007

The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.

• Applied Chemistry for Engineering
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• v.32 no.6
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• pp.700-705
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• 2021

A portable and disposable pH sensor based on Ti wire was successfully developed for monitoring hydronium ion concentrations. A sensing electrode was prepared by electrochemically depositing iridium oxide onto a Ti wire, while a reference electrode was fabricated by coating Ag/AgCl ink on a Ti wire. Combining the two electrodes in the pH sensor enabled the collection of open circuit potential signals when the sensor was immersed in solutions of various pH values. The pH sensor exhibited excellent electrochemical sensing performance in terms of sensitivity, response time, repeatability, selectivity, and stability. To demonstrate point-of-measurement applications, the pH sensor was integrated with a wireless electronic module that could communicate with a mobile application. The portable pH sensor accurately measured pH changes in real samples. The results obtained were consistent with those of using a commercial pH meter.

• Applied Chemistry for Engineering
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• v.32 no.1
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• pp.42-48
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• 2021

In this study, a sensor for detection of nitric oxide (NO) gas was developed using petroleum pitch-based activated carbon which was synthesized from pyrolysis fuel oil (PFO). Polyethylene terephthalate (PET) was added to increase molecular weight by stimulating a polymerization of components in PFO during the pitch synthesis process. The increase in the molecular weight of pitch contributed to the improvement of textural properties of activated carbon, such as the specific surface area and micropore volume. It also enhanced the sensitivity of NO gas sensor based on the activated carbon. In addition, the effect of PET addition during the pitch synthesis on the surface oxygen content and conductivity of activated carbon was investigated. Finally, the correlation of the sensitivity with physical properties of activated carbon was analyzed.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.145-159
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• 2021

Light soaking (LS) stability in polymer solar cells (PSCs) has always been a challenge to achieve due to unstable photoactive layer-electrode interface. Especially, the electron transport layer (ETL) and photoactive layer interface limits the LS stability of PSCs. Herein, we have modified the most commonly used and robust zinc oxide (ZnO) ETL-interface using an organic dye molecule and a co-adsorbent. Power conversion efficiencies have been slightly improved but when these PSCs were subjected to long term LS stability chamber, equipped with heat and humidity (45℃ and 85% relative humidity), an outstanding stability in the case of ZnO/dye+co-adsorbent ETL containing devices have been achieved. The enhanced LS stability occurred due to the suppressed interfacial defects and robust contact between the ZnO and photoactive layer. Current density as well as fill factors have been retained after LS with the modified ETL as compared to un-modified ETL, owing to their higher charge collection efficiencies which originated from higher electron mobilities. Moreover, the existence of less traps (as observed from light intensity-open circuit voltage measurements and dark currents at -2V) are also found to be one of the reasons for enhanced LS stability in the current study. We conclude that the mitigation ETL-surface traps using an organic dye with a co-adsorbent is an effective and robust approach to enhance the LS stability in PSCs.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.83-90
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• 1998

The effects of dopant activation anneal on GOI (Gate Oxide Integrity) of MOS capacitor with amorphous silicon gate electrode were investigated. It was found that the amorphous silicon gate electrode was crystallized and the dopant atoms were sufficiently activated by activation anneal. The mechanical stress of gate electrode that reveals large compressive stress in amorphous state, was released with increase of anneal temperature from $700^{\circ}C$ to 90$0^{\circ}C$. The resistivity of gate electrode polycrystalline silicon film is decreased by the increase of anneal temperature. The reliability of thin gate oxide and interface properties between oxide and silicon substrate greatly depends on the activation anneal temperature. The charge trapping characteristics as well as oxide reliability are improved by the anneal of 90$0^{\circ}C$ compare to that of $700^{\circ}C$ or 80$0^{\circ}C$. Especially, the lifetimes of the thin gate oxide estimated by TDDB method is 3$\times$10$^{10}$ for the case of $700^{\circ}C$ anneal, is significantly increased to 2$\times$10$^{12}$ for the case of 90$0^{\circ}C$ anneal. Finally, the interface trap density is reduced with relaxation of mechanical stress of gate electrode.

• Journal of Technologic Dentistry
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• v.27 no.1
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• pp.97-104
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• 2005

The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens, which is 0.8mm in thickness, were fired at 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. It observed oxide film form of the fired specimens with optical microscope and scanning electron microscope (SEM), and chemical formation of them with energy disperse X-ray spectroscopy (EDX). The other specimens, which is 2mm in thickness, were fired at 1,000$^{\circ}C$ with air and vacuum in order to analyze the diffusion behaviors of alloy-porcelain interface by X-ray dot mapping. The results of this study were as follows: 1. The observation of microstructure of specimens by SEM showed that the more Nb content is high, the more much intermediate compound of rich Nb is observed. 2. The surface morphology of oxide film is most dense in 3% Nb. The heat treatment in air constitutes denser oxide film than heat treatment under vacuum. 3. The diffusion behavior of oxide layer by X-ray dot mapping showed that Si, Al of porcelain diffuse toward metal.