• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.5 no.12
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• pp.2272-2293
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• 2011

Communication technology of future networks is predicted to provide a large variety of services including WiFi service in vehicular network. In this paper, we assume that vehicles are embedded with WiMAX antenna and in-vehicle terminals receive WiMAX traffic through WiFi interface. This assumption will impose severe performance degradation due to interference among mobile BSSs when WiFi access points (APs) are densely located. Existing interference avoidance techniques cannot properly resolve the above problems and do not cope with dynamically moving vehicular scenario since they focus only on the fixed network topology. In this paper, we propose a mobility-aware interference avoidance scheme for WiFi services. The proposed scheme computes the interference duration by exploiting mobility vector and location information of neighboring APs. If the interference duration is not negligible, our scheme searches for another channel in order to avoid interference. However, if the interference duration is negligible, our scheme continues to use the channel to reduce switching overhead. To measure the effectiveness of the proposed scheme against other existing techniques, we evaluated performance by using OPNET simulator. Through the simulation, we obtained about 60% reduction in the maximum interference frequency and about 67% improvement in throughput. Furthermore, our scheme provides fair channel usage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.246-250
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• 2021

TFTs technologies with as high mobility as possible is essential for high-performance large displays. TFTs using nanocrystalline silicon thin films can achieve higher mobility. In this work, the change of the crystalline volume fraction at different hydrogen dilution ratios was investigated by depositing nc-Si:H thin films using PECVD. It was observed that increasing hydrogen dilution ratio increased not only the crystalline volume fraction but also the crystallite size. The thin films with a high crystalline volume fraction (55%) and a low defect density (10¹⁷ cm^-3·eV^-1) were used as top gate TFTs channel layer, leading to a high mobility (55 cm²/V·s). We suggest that TFTs of high mobility to meet the need of display industries can be benefited by the formation of thin film with high crystalline volume fraction as well as low defect density as a channel layer.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.46-47
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• 1996

• ETRI Journal
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• v.39 no.3
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• pp.326-335
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• 2017

In the uplink transmission of massive (or large-scale) multi-input multi-output (MIMO) systems, large dimensional signal detection and its hardware design are challenging issues owing to the high computational complexity. In this paper, we propose low-complexity hardware architectures of Richardson iterative method-based massive MIMO detectors. We present two types of massive MIMO detectors, directly mapped (type1) and reformulated (type2) Richardson iterative methods. In the proposed Richardson method (type2), the matrix-by-matrix multiplications are reformulated to matrix-vector multiplications, thus reducing the computational complexity from $O(U^2)$ to O(U). Both massive MIMO detectors are implemented using a 65 nm CMOS process and compared in terms of detection performance under different channel conditions (high-mobility and flat fading channels). The hardware implementation results confirm that the proposed type1 Richardson method-based detector demonstrates up to 50% power savings over the proposed type2 detector under a flat fading channel. The type2 detector indicates a 37% power savings compared to the type1 under a high-mobility channel.

• ETRI Journal
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• v.27 no.4
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.500-505
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• 2012

In this study, the influence of the intermolecular distance on the charge mobility in a pentacene thin-film was investigated. In order to increase the mobility which depends on the ${\pi}$-overlap between molecules, the intermolecular distance was shortened by compressive force along the conduction channel. Pentacene thin-film was fabricated on flexible substrates bent outward at different radii to stretch the gate dielectric surface and then the substrates were unbent, producing the compressive force to the film. The result showed that the mobility increased proportionally to the strain applied during the pentacene deposition and the molecular packing inside a grain was not optimal for the charge transport.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.3A
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• pp.304-310
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• 2008

In a wireless mesh network, there are two types of nodes: mesh routers and mesh clients. These two contradistinct network entities will be characterized and modeled depending on their role in the network. Mesh routers are essentially not mobile unlike the mesh clients. The differences on these nodes should be noted in any protocol design. In this paper, we present a mobility management for wireless mesh network (WMN). This mobility management handles movement of wireless mesh clients as it leaves from a coverage area of a wireless mesh router to another. We consider signaling overhead and mobility as performance metrics.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.1
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• pp.27-34
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• 2023

This study conducted a study on a small-capacity PCS using lithium-ion batteries used in personal mobility. Most of the batteries in Personal Mobility only charge with external chargers and are used only as mobile energy sources. However, this paper aims to charge the battery of PM using PV and system power or to use the charged power as a stand-alone power supply. The developed PCS can be operated as a two-channel battery charger/discharger, a battery charger using solar power, and a stand-alone solar inverter depending on the operation method. The validity of the manufactured small-capacity PCS was verified through experiments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.1-7
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• 2004

In order to enhance the electron mobility in SOI n-MOSFET, we fabricated fully depletion(FD) n-MOSFET on the strained Si/relaxed SiGa/SiO$_2$/Si structure(strained Si/SGOI) formed by inserting SiGe layer between a buried oxide(BOX) layer and a top silicon layer. The summated thickness of the strained Si and relaxed SiGe was fixed by 12.8 nm and then the dependency of electron mobility on strained Si thickness was investigated. The electron mobility in the FD n-MOSFET fabricated on the strained Si/SGOI enhanced about 30-80% compared to the FD n-MOSFET fabricated on conventional SOI. However, the electron mobility decreased with the strained Si thickness although the inter-valley phonon scattering was reduced via the enhancement of the Ge mole fraction. This result is attributed to the increment of intra-valley phonon scattering in the n-channel 2-fold valley via the further electron confinement as the strained Si thickness was reduced.