Effect of Ge mole fraction and Strained Si Thickness on Electron Mobility of FD n-MOSFET Fabricated on Strained Si/Relaxed SiGe/SiO2/Si
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백승혁
(한양대학교 전자통신전파공학과)
심태헌 (한양대학교 전자통신전파공학과) 문준석 (한양대학교 전자통신전파공학과) 차원준 (한양대학교 전자통신전파공학과) 박재근 (한양대학교 전자통신전파공학과) |
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