참고문헌
- ETRI J. v.26 no.3 A Dual-Mode 2.4-GHz CMOS Transceiver for High-Rate Bluetooth Systems Hyun, Seok-Bong;Tak, Geum-Young;Kim, Sun-Hee;Kim, Byung-Jo;Ko, Jin-Ho;Park, Seong-Su
- ETRI J. v.25 no.3 Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers Kim, Cheon-Soo;Kim, Sung-Do;Park, Mun-Yang;Yu, Hyun-Kyu
- IEEE Trans. Electron Devices v.41 no.1 SiGe-Channel Heterojunction p-MOSFET’s Verdonckt-Vandebroek, S.;Crabbe, E.F.;Meyerson, B.S.;Harame, D.L.;Restle, P.J.;Stork, J.M.C.;Johnson, J.B.
- Electron Device Lett. v.24 no.9 Band Offset Induced Threshold Variation in Strained-Si nMOSFETs Goo, Jung-Suk;Takamura, Qi Xiang;Arasnia, Y.;Paton, F.;Besser, E.N.;Pan, P.;Ming-Ren Lin, J.
- IEEE Trans. Electron Devices v.50 no.9 High-Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture Olsen, S.H.;O'Neill, A.G.;Driscoll, L.S.;Kwa, K.S.K.;Chattopadhyay, S.;Waite, A.M.;Tang, Y.T.;Evans, A.G.R.;Norris, D.J.;Cullis, A.G.;Paul, D.J.;Robbins, D.J.
- IEEE Trans. Electron Devices v.50 no.4 Performance Projections of Scaled CMOS Devices and Circuits with Strained Si-on-SiGe Channels Fossum, J.G.;Zhang, Weimin
- The International Technology Roadmap for Semiconductor
- J. of Applied Physics v.80 no.4 Band Structure, Deformation Potentials, and Carrier Mobility in Strained Si, Ge, and SiGe Alloys Fischetti, M.V.;Laux, S.E.
- IEDM Technical Digest Enhanced Performance in Sub-100 nm CMOSFETs Using Strained Epitaxial Silicon-Germanium Yeo, Y.C.;Lu, Q.;King, T.J.;Hu, C.;Kawashima, T.;Oishi, M.;Mashiro, S.;Sakai, J.
- IEEE Trans. Electron Devices v.47 no.8 Comparison of Deep-Submicrometer Conventional and Retrograde n-MOSFETs Ma, S.T.;Brews, J.R.
- J. Appl. Phys. v.93 no.12 Nanoscale Thermal Transport Cahill, D.G.;Ford, W.K.;Goodson, K.E.;Mahan, G.D.;Majumdar, A.;Maris, H.J.;Merlin, R.;Phillpot, S.R.
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J. Appl. Phys.
v.35
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Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to
$1300^{\circ}K$ Dismukes, J.P.;Ekstrom, L.;Steigmeier, E.F.;Kudman, I.;Beers, D.S. - Electron Device Lett. v.23 no.6 Measurement of the Effect of Self-Heating in Strained-Silicon MOSFETs Jenkins, K.A.;Rim, K.
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ETRI J.
v.25
no.3
DC and RF Characteristics of
$Si_{0.8}Ge_{0.2}$ pMOSFETs: Enhanced Operation Speed and Low 1/f Noise Song, Y.J.;Shim, K.H.;Kang, J.Y.;Cho, K.I. - Appl. Phys. Lett. v.78 Effective Mobilities in Pseudomorphic Si/SiGe/Si p-channel Metal-Oxide-Semiconductor Field-Effect-Transistors with Thin Silicon Capping Layers Palmer, M.J.;Braithwaite, G.;Grasby, T.J.;Phillips, P.J.;Prest, M.J.;Parker, E.H.C.;Whall, T.E.;Parry, C.P.;Waite, A.M.;Evans, A.G.R.;Roy, S.;Watling, J.R.;Kaya, S.;Asenov, A.
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- IEEE Trans. Electron Devices v.41 no.11 The Impact of Device Scaling on the Current Fluctuations in MOSFET's Tsai, Ming-Horn;Ma, Tso-Ping