• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.

• Phonetics and Speech Sciences
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• v.6 no.3
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• pp.91-99
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• 2014

Although it is well documented that patients with cochlear implant experience hearing difficulties when processing their first language, very little is known whether or not and to what extent cochlear implant patients recognize segments in a second language. This preliminary study examines how Korean learners of English identify English segments in a normal hearing and cochlear implant simulation conditions. Participants heard English vowels and consonants in the following three conditions: normal hearing condition, 12-channel noise vocoding with 0mm spectral shift, and 12-channel noise vocoding with 3mm spectral shift. Results confirmed that nonnative listeners could also retrieve spectral information from vocoded speech signal, as they recognized vowel features fairly accurately despite the vocoding. In contrast, the intelligibility of manner and place features of consonants was significantly decreased by vocoding. In addition, we found that spectral shift affected listeners' vowel recognition, probably because information regarding F1 is diminished by spectral shifting. Results suggest that patients with cochlear implant and normal hearing second language learners would experience different patterns of listening errors when processing their second language(s).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.97-98
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• 2006

For high performance transistor in the 0.14um generation, high speed sram is using a weak region of SCE(Short Channel Effect). It causes serious SCE problem (Vth Roll-Off and Punch-Through etc). This paper shows improvement of Vth roll-off and Ion/Ioff characteristics through high concentration Pocket implant, LDD(Light Dopped Dram) and low energy Implant to reduce S/D Extension resistance. We achieve stabilized Vth and Improved transistor Ion/Ioff performance of 10%.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.517-525
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• 2002

The channel region of seep-sub-micrometer MOSFET is non-uniformly doped with pocket implant. Therefore, the advanced threshold voltage model is needed to account for the Short-Channel Effect and Reverse-Short-Channel Effect due to the non-uniform doping concentration in the channel region. In this paper, A scalable analytical model for the MOSFET threshold voltage is developed. The developed model is verified with MEDICI and TSUPREM simulator.

• Journal of Periodontal and Implant Science
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• v.35 no.3
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• pp.591-596
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• 2005

Amlodipine, nifedipine, and felodipine are calcium channel blocking agents, which are cause of unwanted gingival overgrowth around natural teeth. Many studies has been performed about this unwanted effects. However, the exact etiology remains uncertain.Few reports and investigations can be found in the literature on drug-induced gingival overgrowth around dental implants. The present case reports that amlodipine-induced gingival overgrowth occurred in peri-implant sites, confirms clinical and histological features in hyperplastic peri-implant tissues. Clinical and histological features of amlodipine-induced gingival overgrowth around dental implants were similar to that of tissue around natural teeth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• Phonetics and Speech Sciences
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• v.1 no.2
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• pp.25-30
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• 2009

Animal experiments have shown that the positive peaked electrically compound action potentials (ECAPs) can be recorded in round window, intracochlear, and nerve trunk by stimulating a monopolar pulse. However, positive peaked ECAPs of cochlear implant recipients have never been reported because ECAPs are recorded from intracochlear electrodes after bipolar stimulation. In our experiment, the positive peaked ECAPs were recorded from 18 intracochlear electrodes in cochlear implant recipients with multiple cochlear anomalies. Thresholds in each channel were measured and the latency of P-, N-wave, and amplitude of P-N were analyzed. These results were identical with the electrically auditory brainstem response (EABR) on the input-output characteristics. In conclusion, the positive peaked ECAPs from the cochlear implant recipients are antidromic ECAPs recorded by perimodiolar electrodes stimulating cochlear implants with multiple anomalies. Therefore, positive peaked ECAPs can be used as useful audiological tools to evaluate the eighth nerve ending.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.35-41
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• 2017

We propose a novel multi-photodiode array (MPDA) based retinal implant IC with on/off stimulation strategy for a visual prosthesis with improved spatial resolution. An active pixel sensor combined with a comparator enables generation of biphasic current pulses when light intensity meets a threshold condition. The threshold is tuned by changing the discharging time of the active pixel sensor for various light intensity environments. A prototype of the 30-channel retinal implant IC was fabricated with a unit pixel area of $0.021mm^2$, and the stimulus level up to $354{\mu}A$ was measured with the threshold ranging from 400 lx to 13120 lx.

• Journal of Biomedical Engineering Research
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• v.34 no.2
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• pp.47-54
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• 2013

Electrical stimulation is delivered to auditory nerve (AN) through the electrodes in cochlear implant system. Neurogram is a spectrogram that includes information of neural response to electrical stimulation. We hypothesized that the similarity between a neurogram and an input-sound spectrogram could show how well a cochlear implant system works. In this study, we evaluated electrical stimulus configuration of CIS strategy using the computational model. The computational model includes stochastic property and anatomical features of cat auditory nerve fiber. To evaluate similarity between a neurogram and an input-sound spectrogram, we calculated Structural Similarity Index (SSIM). The results show that the dynamic range and the stimulation rate per channel influenced SSIM. Finally, we suggested the optimal configuration within the given stimulus CIS. We expect that the results and the evaluating procedure could be employed to improve the performance of a cochlear implant system.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.193-196
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• 2002

This paper presents the improvement of the boron penetration and the reverse short channel effect (RSCE) in the 130nm W/WNx/Poly-Si dual gate PMOSFET for a high performance embedded DRAM. In order to suppress the boron penetration, we studied a range in the process heat budget. It has shown that the process heat budget reduction results in suppression of the boron penetration. To suppress the RSCE, we experimented with the halo (large tilt implantation of the same type of impurities as those in the device well) implant condition near the source/drain. It has shown that the low angle of the halo implant results in the suppression of the RSCE. The experiment was supported from two-dimensional(2-D) simulation, TSUPREM4 and MEDICI.