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Threshold Voltage Model of the MOSFET for Non-Uniform Doped Channel  

Jo, Myung-Suk (江陸大 電子工學科)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.11, 2002 , pp. 517-525 More about this Journal
Abstract
The channel region of seep-sub-micrometer MOSFET is non-uniformly doped with pocket implant. Therefore, the advanced threshold voltage model is needed to account for the Short-Channel Effect and Reverse-Short-Channel Effect due to the non-uniform doping concentration in the channel region. In this paper, A scalable analytical model for the MOSFET threshold voltage is developed. The developed model is verified with MEDICI and TSUPREM simulator.
Keywords
MOSFET;
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