1 |
P. Habas and S. Selberherr, Solid State Electron., 33, 1539 (1990). [DOI: https://doi.org/10.1016/0038-1101(90)90134-Z]
DOI
|
2 |
C. H. Choi, P. R. Chidambaram, R. Khamankar, C. F. Machala, Z. Yu, and R. W. Dutton, IEEE Trans. Electron Dev., 49, 1227 (2002). [DOI: https://doi.org/10.1109/TED.2002.1013280]
|
3 |
N. Rodriguez, F. Gamiz, and J. B. Roldan, IEEE Trans. Electron Dev., 54, 723 (2007). [DOI: https://doi.org/10.1109/TED.2007.891854]
DOI
|
4 |
R. Dutta and S. Kundu, Proc. 2012 5th International Conference on Computers and Devices for Communication (CODEC) (IEEE, Kolkata, India, 2012) p. 1.
|
5 |
N.C.C. Lu, L. Gerzberg, C. Y. Lu, and J. D. Meindl, IEEE Trans. Electron Dev., 30, 137 (1983). [DOI: https://doi.org/10.1109/T-ED.1983.21087]
DOI
|
6 |
B. G. Streetman and S. Banerjee, Solid State Electronic Devices 6th Edition (Pearson Prentice Hall, New Jersey, 2006) p. 310.
|
7 |
C. Hu, S. C. Tam, F. C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Terrill, IEEE Electron Device Lett., 32, 375 (1985). [DOI: https://doi.org/10.1109/T-ED.1985.21952]
DOI
|