• 제목/요약/키워드: body voltage

검색결과 477건 처리시간 0.028초

일체형 주상용 몰드변압기의 덕트에 따른 열해석 특성 연구 (The Thermal Analysis of Pole Mount Mold Transformer with One-body Molding by Duct Condition)

  • 조한구;이운용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1135-1138
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    • 2003
  • The transformer is major equipment in power receiving and substation facilities. Necessary conditions required for the transformer are compactness, lightness, high reliability, economic advantages, and easy maintenance. The pole-mount transformer installed in distribution system is acting direct role in supply of electric power and it is electric power device should drive for long term. Most of modem transformer are oil-filled transformer and accident is happening considerable. The mold transformers have been widely used in underground substations in large building and have some advantages in comparison to oil-transformer, that is low fire risk, excellent environmental compatibility, compact size and high reliability. In addition, the application of mold transformer for outdoor is possible due to development of epoxy resin. The mold transformer generally has cooling duct between low voltage coil and high voltage coil. A mold transformer made by one body molding method has been developed for small size and low loss. One body molding transformer needs some cooling method because heat radiation between each winding is difficult. In this paper, The thermal analysis of pole mount mold transformer with one body molding by duct condition is investigated and the test result of temperature rise is compared with simulation data.

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패스 트랜지스터에 바디 구동 기술을 적용한 저면적 LDO 레귤레이터 (Small area LDO Regulator with pass transistor using body-driven technique)

  • 박준수;유대열;송보배;정준모;구용서
    • 전기전자학회논문지
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    • 제17권2호
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    • pp.214-220
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    • 2013
  • 본 논문에서는 패스 트랜지스터에 바디 구동 기술을 적용하여 면적을 감소시킨 LDO (Low drop-out) 레귤레이터를 제안하였다. 바디 구동 기술은 트랜지스터의 문턱전압 (Vth)을 감소시켜 드레인 전류를 증가시켜 전류 구동 능력을 향상시킨다. 본 논문에서는 LDO 레귤레이터의 패스 트랜지스터에 바디 구동 기술을 적용하여 면적을 감소시키고, 기존 LDO 레귤레이터와 동일한 성능을 유지하였다. 본 논문에서 제안하는 패스 트랜지스터는 동일한 성능 대비 면적은 5.5 % 감소 하였다. 본 논문에서 제안하는 LDO 레귤레이터는 2.7 V ~ 4.5 V의 입력 전압, 1.2 V ~ 3.3 V의 출력전압 범위를 가지며, 150 mA의 출력 전류를 공급한다.

스로틀 바디 제어신호 전달용 커넥터의 이상전압 강하 현상 원인 규명 (Root cause analysis on the phenomenon of voltage drop of connector used in the automotive throttle body control)

  • 조영진;장석원
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.1792-1797
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    • 2007
  • This paper try to find root-cause of failure in a connector used in transmitting signals for throttle body control in automotives by analyzing possible failure causes and performing experiments to simulate the cable failure in field. The connector comprises fins, wires, and case moldings. The failure is due to degradation of initial clamping force required fixing fins and wires in the connector. Expansion and compression of the case molding material surrounding fins would cause the degradation. Investigations of strict initial claming force and control of thermal expansion property of the molding are required to prevent the failure.

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계통상태를 고려한 ELF 전자계의 인체안전평가를 위한 퍼지언어변수 접근법 (Fuzzy Linguistic Variable Based Approach for Safety Assessment of Human Body in ELF Electromagnetic Field Considering Power System States)

  • 김상철;김두현;고은영
    • 한국안전학회지
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    • 제12권2호
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    • pp.70-79
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    • 1997
  • This paper presents a study on the fuzzy linguistic variable based approach for safety assessment of human body in ELF electromagnetic field considering power system states. To cope with the demand in modern industry, the power system becomes larger in scale, higher in voltage. The advent of high voltage system has increased the relative importance of field effects. The analysis of ELF electromagnetic field based on Quasi-Static Method is introduced while the power system is included to model the expected and/or unexpected uncertainty caused by the load fluctuation and parameter changes. In order to analyze the power system, Monte Carlo simulation method and contingency analysis method are adopted in normal state and alert state, respectively. In the safety assessment of human body, the approach based on fuzzy linguistic variable is employed to overcome the shortcomings resulting from a crisp set concept. The suggested scheme is applied to a sample system(modified IEEE 14 bus system) to validate the usefulness.

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Effects of Transfer Gate on the Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector

  • Jang, Juneyoung;Seo, Sang-Ho;Kong, Jaesung;Shin, Jang-Kyoo
    • 센서학회지
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    • 제31권1호
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    • pp.12-15
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    • 2022
  • In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

An Algorithm for Applying Multiple Currents Using Voltage Sources in Electrical Impedance Tomography

  • Choi, Myoung-Hwan;Kao, Tzu-Jen;Isaacson, David;Saulnier, Gary J.;Newell, Jonathan C.
    • International Journal of Control, Automation, and Systems
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    • 제6권4호
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    • pp.613-619
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    • 2008
  • A method to produce a desired current pattern in a multiple-source EIT system using voltage sources is presented. Application of current patterns to a body is known to be superior to the application of voltage patterns in terms of high spatial frequency noise suppression, resulting in high accuracy in conductivity and permittivity images. Since current sources are difficult and expensive to build, the use of voltage sources to apply the current pattern is desirable. An iterative algorithm presented in this paper generates the necessary voltage pattern that will produce the desired current pattern. The convergence of the algorithm is shown under the condition that the estimation error of the linear mapping matrix from voltage to current is small. Simulation results are presented to illustrate the convergence of the output current.

250 mV Supply Voltage Digital Low-Dropout Regulator Using Fast Current Tracking Scheme

  • Oh, Jae-Mun;Yang, Byung-Do;Kang, Hyeong-Ju;Kim, Yeong-Seuk;Choi, Ho-Yong;Jung, Woo-Sung
    • ETRI Journal
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    • 제37권5호
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    • pp.961-971
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    • 2015
  • This paper proposes a 250 mV supply voltage digital low-dropout (LDO) regulator. The proposed LDO regulator reduces the supply voltage to 250 mV by implementing with all digital circuits in a$0.11{\mu}m$ CMOS process. The fast current tracking scheme achieves the fast settling time of the output voltage by eliminating the ringing problem. The over-voltage and under-voltage detection circuits decrease the overshoot and undershoot voltages by changing the switch array current rapidly. The switch bias circuit reduces the size of the current switch array to 1/3, which applies a forward body bias voltage at low supply voltage. The fabricated LDO regulator worked at 0.25 V to 1.2 V supply voltage. It achieved 250 mV supply voltage and 220 mV output voltage with 99.5% current efficiency and 8 mV ripple voltage at $20{\mu}A$ to $200{\mu}A$ load current.

대칭형 이중 게이트 MOSFET에 대한 문턱전압 연구 (A Study of the Threshold Voltage of a Symmetric Double Gate Type MOSFET)

  • 이정일;신진섭
    • 한국인터넷방송통신학회논문지
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    • 제10권6호
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    • pp.243-249
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    • 2010
  • 본 논문에서는 대칭형 이중 게이트 MOSFET의 회로해석에 대한 등가모델을 제시하고자 해석적 모델을 연구하였다. 본 연구의 해석적 모델에 사용된 방법은 2차원 포아송 방정식의 해를 가정하여 표면 전위 관계식을 유도하여 실리콘 몸체 내의 전위분포를 풀어 드레인 전압 변화에 대한 문턱전압 관계식을 도출하였다. 단채널 및 장채널 실리콘 채널에서 모두 해석이 가능한 해석적 모델을 적용 가능하도록 하기 위해 MOSFET의 채널 길이에 따른 제한된 지수함수를 적용함으로써 수백 나노미터까지 해석이 가능한 대칭형 이중 게이트 MOSFET 해석적 모델을 연구하였다.

Growld Plane SOI MOSFET의 단채널 현상 개선 (Reduction of short channel Effects in Ground Plane SOI MOSFET′s)

  • 장성준;윤세레나;유종근;박종태
    • 대한전자공학회논문지SD
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    • 제41권4호
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    • pp.9-14
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    • 2004
  • 매몰 산화층 밑의 실리콘 기판에 자기정렬 방법으로 ground plane 전극을 만든 SOI MOSFET의 단채널 현상과 Punchthrough 특성을 측정·분석하였다. 채널 길이가 $0.2{\mu}m$ 이하의 소자에서는 GP-SOI 소자가 FD-SOI 소자보다 채널 길이에 따른 문턱전압 저하 및 subthreshold swing이 작고 DIBL 현상이 크게 개선됨을 알 수 있었다. 기판전압에 따른 문턱전압 특성으로부터 GP-SOI 소자의 body factor가 FD-SOI 소자보다 큰 것을 알 수 있었다. 그리고 punchthrough 전압 특성으로부터 GP-SOI 소자의 punchthrough 전압이 FD-SOI 소자보다 큰 것을 알 수 있었다.

저전압 DRAMs을 위한 2-단계 2-위상 VPP 전하 펌프 발생기 (A Two-Stage Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs)

  • 조성익;유성한;박무훈;김영희
    • 대한전자공학회논문지SD
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    • 제40권6호
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    • pp.442-446
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    • 2003
  • 본 논문에서는 몸체효과와 문턱전압 손실이 제거된 새로운 2-단계 2-위상 VPP 전하펌프 발생기를 제안하였다. 새롭게 제안된 회로의 동작을 검증하기 위하여 0.18um Triple-Well CMOS 공정을 사용하였으며, VPP의 전압 레벨은 VDD가 문턱전압 이상일 때 3VDD가 공급되는 결과를 얻었다.