Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Two-Stage Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs

저전압 DRAMs을 위한 2-단계 2-위상 VPP 전하 펌프 발생기

  • Published : 2003.06.01
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Abstract

This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18um triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.

본 논문에서는 몸체효과와 문턱전압 손실이 제거된 새로운 2-단계 2-위상 VPP 전하펌프 발생기를 제안하였다. 새롭게 제안된 회로의 동작을 검증하기 위하여 0.18um Triple-Well CMOS 공정을 사용하였으며, VPP의 전압 레벨은 VDD가 문턱전압 이상일 때 3VDD가 공급되는 결과를 얻었다.

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References

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