Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Effects of Transfer Gate on the Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector

  • Jang, Juneyoung (School of Electronic and Electrical Engineering, Kyungpook National Unversity) ;
  • Seo, Sang-Ho (Korea Polytechnic Robot Campus) ;
  • Kong, Jaesung (Korea Polytechnic Robot Campus) ;
  • Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
  • Received : 2022.01.20
  • Accepted : 2022.01.28
  • Published : 2022.01.31
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Abstract

In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

Keywords

Acknowledgement

This research was supported by the Samsung Electronics Company, Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A3B0704995213), and the Integrated Circuit Design Education Center (IDEC) in Korea, and we are grateful for these supports.

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