• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.8
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• pp.853-859
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• 2014

This study presents a technique for extracting all the extrinsic parameters of HEMTs by minimizing the residual errors between a pinch-off cold-FET's gate and drain pad de-embedded Z-parameters and its modeled Z-parameters calculated by the cold-FET's remaining parameters. The presented technique allows us to successfully extract the remaining extrinsic parameter values as well as the gate and drain pad capacitance value without the additional fabrications of the gate and drain dummy pad.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.6
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• pp.876-885
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• 2000

A new and simple method is presented for determining the parasitic resistances of MESFET and HEMT from the measured S-parameters under normal active bias without depending on additional DC measurements or iteration or optimization process. The presented method is based on the fact that the difference between source resistance(Rs) and drain resistance(Rd) can be obtained from the measured Z-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and 3 parasitic resistances by elimination the parasitic inductances and capacitances from the measured S-parameters. Three parasitic resistances are calculated easily from the fact that the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are zero theoretically and the relations between S-,Z-, Y-matrices. The calculated parasitic resistances using the presented method and successively calculated equivalent circuit parameters give modeled S-parameters which are in good agreement with the measured S-parameters up to 400Hz.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.21-27
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• 2015

An improved method based on direct extraction and simultaneous optimization is developed to determine model parameters of symmetric inductors fabricated by the high resistivity(HR) silicon-on-insulator(SOI) RF CMOS process. In order to improve modeling accuracy, several model parameters are directly extracted by Y and Z-parameter equations derived from two equivalent circuits of symmetric inductor and grounded center-tap one, and the number of unknown parameters is reduced using parallel resistance and total inductance equations. In order to improve optimization accuracy, two sets of measured S-parameters are simultaneously optimized while same model parameters in two equivalent circuits are set to common variables.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.21-26
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• 2004

In this paper, a direct method is developed to extact RF equivalent circuit of a packaged BJT without optimization. First, parasitic components of plastic package are removed from measured S-parameters using open and short package patterns. Using package do-embedded S-parameters, a direct and simple method is proposed to extract bonding wire inductance and chip pad capacitance between package lead and chip pad. The small-signal model parameters of internal BJT are next determined by Z and Y-parameter formula derived from RF equivalent circuit. The modeled S-parameters of packaged BJT agree well with measured ones, verifying the accuracy of this new extraction method.

• Korean Journal of Optics and Photonics
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• v.7 no.1
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• pp.77-86
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• 1996

We employ the SOR method to analyze CPW electrodes of Ti:$LiNbO_3$ Mach-Zehnder traveling-wave optical modulator in the tapered region of an optical modulator. In the tapered region of the modulator, we design the electrodes satisfying $Z_c=50{\Omega}$. In the modulation region, we find two find sets of design parameters. One set is for $Z_c=50{\Omega}$, $n_{eff}=2.26$ and the another is for $n_{eff}=2.2$, $Z_c=47.7{\Omega}$.

• Journal of the Korean Chemical Society
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• v.30 no.3
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• pp.273-281
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• 1986

This study is focused on the correct measurement of the equations for the determination of the impedance parameters-the differential capacity of the double layer $C_d$, solution resistance $R_Q$, transfer resitance $R_i$, and adsorption pseudcapacity $C_{\phi}$/ The application of only an imaginary part of complex function of ${\omega}$ at the sinusoidal steady state indicates the following equations of total impedance: at low frequency $|Z_{LF}|=1/{\omega}_1\;C_{\phi}\;{\sqrt{1+{{\omega}_1}^2/{\omega}^2}$, at high frequency $|Z_{HF}|={\omega}_2/({\omega}_1{\omega}_3C{\phi})({\omega}^2+{{\omega}_2}^2)\;{\sqrt{{({\omega}^2+{\omega}_2{\omega}_3)}^2+{({\omega}_2{\omega}-{\omega_3{\omega})^2}}$. The values of the total impedance of cell, phase angle, and cell current that are necessary for the calculations of impedance parameters were experimentally measured from 200 to 6000Hz for the following supporting electrolytes, 0.5M $Na_2SO_4$, 1M NaCl, 19.373% sea water, 1M HCl, 1M $KNO_3$ and for $10^{-2}M$ KI and 60mM DBNA (Di-iso-Butylnitrosoamine) in these supporting electrolytes. The derived equations in this study shows that the values of impedance parameters of $C_d,\;C_{\phi},\;R_i\;and\;R_Q\;are\;15{\sim}40\;{\mu}F/cm^2,\;162{\sim}758\;{\mu}F/cm^2\;11.5{\sim}57.6\;ohm{\cdot}cm^2\;and\;0.5{\times}10^{-2}{\sim}4.1{\times}10^{-2}\;ohm{\cdot}cm^2$ respectively.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.545-554
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• 2003

Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.

• Tunnel and Underground Space
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• v.21 no.6
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• pp.494-507
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• 2011

Rock joint surface roughness is one of the most important parameters in shear behavior analysis of rock joint surface. Until now, estimation of joint surface roughness has been conducted by various statistical methods with two-dimensional analysis. In this study, standard roughness profile suggested by Barton and Choubey (1977) was expanded into a 3D surface and its surface roughness was analyzed by surface angularity parameter. And the validity of quantification based on surface angularity was secured through comparison with $Z_2$ and Ai parameter. Also the surface angularity parameter was compared with shear strength by joint shear test using the replicated specimen.

• Applied Biological Chemistry
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• v.38 no.2
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• pp.163-167
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• 1995

New twenty 2-(n-octyl)-3-(n-propyl)isothiourea derivatives(S) were synthesized which is modified from the insecticidal Buprofezine (Applaud) in the selective insecticidal activities in-vitro against Diamond-Back moth (Plutella Xylostella Linnaeus). The structure activity relationships(SAR) between the insecticidal activity$(pI_{50})$ and a various physicochemical parameters of the substituent(Z) of S were analyzed by the multiple regression technique. The activities would depend largely on the MR, ${\pi}$ and $L_1$ parameters. The SAR was rationalized by parabolic function of MR, ${\pi}$ and $L_1$ constant, where the optimal values of the constants were $L_1=5.22{{\AA}}$, $MR=15.70\;Cm^3/mol$ and ${\pi}=1.60$, respectively. The steric effects play an important role in determining insecticidal activity. The SAR suggest that the S derivatives having a substituents with a small breadth and an appropriate length as Z group showed potent activity. From the results, the iso-propyl group(Z) substituent (5) with three carbon atom was the most effective compound.

• Tunnel and Underground Space
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• v.22 no.3
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• pp.196-204
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• 2012

Quantification of roughness plays an important role in modeling strength deformability and fluid flow behaviors of rock joints. A procedure was suggested to simulate joint roughness, and characteristics of the roughness was investigated in this study. Stationary fractional Brownian profiles with known input values of the fractal parameter and other profile properties were generated based on random midpoint displacement method. Also, a procedure to simulate three dimensional roughness surface was suggested using the random midpoint displacement method. Selected statistical roughness parameters were calculated for the generated self-affine profiles to investigate the attribute of roughness. Obtained results show that statistical parameters applied in this study were able to consider correlation structure and amplitude of the profiles. However, effect of data density should be tackled to use statistical parameters for roughness quantification.