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http://dx.doi.org/10.5573/ieie.2015.52.9.021

A Study on Improved Optimization Method for Modeling High Resistivity SOI RF CMOS Symmetric Inductor  

Ahn, Jahyun (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.52, no.9, 2015 , pp. 21-27 More about this Journal
Abstract
An improved method based on direct extraction and simultaneous optimization is developed to determine model parameters of symmetric inductors fabricated by the high resistivity(HR) silicon-on-insulator(SOI) RF CMOS process. In order to improve modeling accuracy, several model parameters are directly extracted by Y and Z-parameter equations derived from two equivalent circuits of symmetric inductor and grounded center-tap one, and the number of unknown parameters is reduced using parallel resistance and total inductance equations. In order to improve optimization accuracy, two sets of measured S-parameters are simultaneously optimized while same model parameters in two equivalent circuits are set to common variables.
Keywords
SOI; RF CMOS; inductor; symmetric; modeling;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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