Equivalent Circuit Model Parameter Extraction for Packaged Bipolar Transistors

패키지된 바이폴라 트랜지스터의 등가회로 모델 파라미터 추출

  • Lee Seonghearn (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
  • 이성현 (한국외국어대학교 전자정보공학부)
  • Published : 2004.12.01

Abstract

In this paper, a direct method is developed to extact RF equivalent circuit of a packaged BJT without optimization. First, parasitic components of plastic package are removed from measured S-parameters using open and short package patterns. Using package do-embedded S-parameters, a direct and simple method is proposed to extract bonding wire inductance and chip pad capacitance between package lead and chip pad. The small-signal model parameters of internal BJT are next determined by Z and Y-parameter formula derived from RF equivalent circuit. The modeled S-parameters of packaged BJT agree well with measured ones, verifying the accuracy of this new extraction method.

본 논문에서는 package된 BJT의 RF 등가회로 모델을 optimization과정 없이 직접 추출하는 방법을 개발하였다. 먼저, open 과 short package 구조를 사용하여 plastic package의 기생성분을 측정된 S-파라미터로부터 정확히 제거하였다. 이와 같이 package do-embedding된 S-파라미터로부터 package lead와 chip pad 사이의 bonding wire 인덕턴스와 chip pad 캐패시턴스를 직접 추출하는 간단한 방법을 구축하였다. 그 후에 내부 BJT소자의 소신호 모델변수들은 RF 등가회로로부터 유도된 Z나 Y-파라미터 방정식을 이용하여 결정하였다. 이 방법으로 모델화된 packaged BJT의 S-파라미터는 측정 데이터와 아주 잘 일치하였으며 이는 새로운 추출방법의 정확성을 증명한다.

Keywords

References

  1. S. Lee, B. R. Ryum, and S. W. Kang, 'A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors,' IEEE Trans. Electron Device, Vol. 41, pp. 233-238, Feb. 1994 https://doi.org/10.1109/16.277373
  2. D.-W. Wu and G. N. Henderson, 'Large-signal modeling and characterization of a plastic packaged HBT for use in wireless portable units,' in Proc. Electrical Performance of Electronic Packaging Meet., pp. 166-168, 1995 https://doi.org/10.1109/EPEP.1995.524884
  3. M. Rittweger, A. Wien, K. Brenndorfer and I. Wolff, 'Device modeling of plastic transfer molding packaged bipolar transistors by use of 3D EM simulations,' in Proc. 1997 Wireless Communications Conf., pp. 134-137, 1997 https://doi.org/10.1109/WCC.1997.622264
  4. H.-S. Rhee, S. Lee, and B. R. Kim, 'DC and AC current crowding effects model analysis in bipolar junction transistors using a new extraction method,' Solid-State Electronics, Vol. 38, no. 1, pp. 31-35, 1995 https://doi.org/10.1016/0038-1101(94)E0062-J
  5. S. Lee, 'A Simple Method to Extract Intrinsic and Extrinsic Base-Collector Capacitances of Bipolar Transistors,' IEEE Trans. Electron Device, Vol. 51, no. 4, pp. 647-650, April 2004 https://doi.org/10.1109/TED.2004.823801