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http://dx.doi.org/10.13067/JKIECS.2014.9.8.853

Extraction of Extrinsic Circuit Parameters of HEMT by Minimizing Residual Errors  

Jeon, Man-Young (동양대학교 정보통신공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.9, no.8, 2014 , pp. 853-859 More about this Journal
Abstract
This study presents a technique for extracting all the extrinsic parameters of HEMTs by minimizing the residual errors between a pinch-off cold-FET's gate and drain pad de-embedded Z-parameters and its modeled Z-parameters calculated by the cold-FET's remaining parameters. The presented technique allows us to successfully extract the remaining extrinsic parameter values as well as the gate and drain pad capacitance value without the additional fabrications of the gate and drain dummy pad.
Keywords
Extrinsic Parameter Extraction of HEMT; Small-Signal Equivalent Circuit Extraction of HEMT; Small-Signal Modeling of HEMT; HEMT Characterization;
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Times Cited By KSCI : 4  (Citation Analysis)
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