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Equivalent Circuit Model Parameter Extraction for Packaged Bipolar Transistors  

Lee Seonghearn (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.12, 2004 , pp. 21-26 More about this Journal
Abstract
In this paper, a direct method is developed to extact RF equivalent circuit of a packaged BJT without optimization. First, parasitic components of plastic package are removed from measured S-parameters using open and short package patterns. Using package do-embedded S-parameters, a direct and simple method is proposed to extract bonding wire inductance and chip pad capacitance between package lead and chip pad. The small-signal model parameters of internal BJT are next determined by Z and Y-parameter formula derived from RF equivalent circuit. The modeled S-parameters of packaged BJT agree well with measured ones, verifying the accuracy of this new extraction method.
Keywords
Packaged bipolar transistors; BJT; parameter extraction; modeling; small-signal model;
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