The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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A New Method for Determination the Parasitic Extrinsic Resistances of MESFETs and HEMTs from the Meaured S-parameters under Active Bias

측정된 S-파라미터에서 MESFET과 HEMT의 기생 저항을 구하는 새로운 방법

  • 임종식 (서울대학교 전기공학부) ;
  • 김병성 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 남상욱 (서울대학교 전기공학부)
  • Published : 2000.09.01
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Abstract

A new and simple method is presented for determining the parasitic resistances of MESFET and HEMT from the measured S-parameters under normal active bias without depending on additional DC measurements or iteration or optimization process. The presented method is based on the fact that the difference between source resistance(Rs) and drain resistance(Rd) can be obtained from the measured Z-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and 3 parasitic resistances by elimination the parasitic inductances and capacitances from the measured S-parameters. Three parasitic resistances are calculated easily from the fact that the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are zero theoretically and the relations between S-,Z-, Y-matrices. The calculated parasitic resistances using the presented method and successively calculated equivalent circuit parameters give modeled S-parameters which are in good agreement with the measured S-parameters up to 400Hz.

추가적인 DC 측정이나 반복 계산법 또는 최적화 방법에 의존하지 않고도, 정상적인 바이어스(Normal activebias) 조건에서 측정하 S-파라미터로부터 MESFET과 HEMT의 외부 기생 저항을 간단히 구할 수 있는 방법이 제시되었다. 이를 위해서 zero 바이어스 조건에서 측정한 Z-파라미터로부터 Rs와 Rd의 차이를 구할수 있다는 사실이 이용된다. 측정한 S-파라미터로부터 외부 기생 인덕터와 캐패시터의 효과를 제거하면, 내부 소자와 외부 기생 저항을 포함한 새로운 소자를 정의할 수 있다. 내부 소자의 Y-파라미터인 Yint,11과 Yint,12의 실수부 값이 이론적으로 0이라는 사실을 이용하여 S-, Y-, Z-파라미터 행렬간의 상화관계를 이용하여 기생 저항 값을 쉽게계산할수 있다. 제시된 방법으로 기생 저항들을 구하고, 이 결과를 이용하여 내부 소자 등가회로를 구한 후에 40GHz까지 S-파라미터를 계산한 결과, 측정된 S-파라미터와 잘 일치하였다.

Keywords

References

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