The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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Extraction of Extrinsic Circuit Parameters of HEMT by Minimizing Residual Errors

잔차 오차 최소에 의한 HEMT의 외인성 파라미터 추출

  • 전만영 (동양대학교 정보통신공학과)
  • Received : 2014.06.12
  • Accepted : 2014.08.11
  • Published : 2014.08.31
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Abstract

This study presents a technique for extracting all the extrinsic parameters of HEMTs by minimizing the residual errors between a pinch-off cold-FET's gate and drain pad de-embedded Z-parameters and its modeled Z-parameters calculated by the cold-FET's remaining parameters. The presented technique allows us to successfully extract the remaining extrinsic parameter values as well as the gate and drain pad capacitance value without the additional fabrications of the gate and drain dummy pad.

본 연구에서는 핀치오프 된 cold-FET에서 게이트와 드레인 패드를 디임베딩하여 얻어지는 Z-파라미터와 게이트와 드레인 패드 커패시턴스를 제외한 핀치오프 된 cold-FET의 나머지 파라미터에 의해 모델링되는 Z-파라미터 사이의 잔차 오차를 최소화함으로써 HEMT의 모든 외인성 파라미터를 추출하는 기법을 제시한다. 제시된 기법을 사용하면 게이트와 드레인 모조패드의 추가적 제작 없이 게이트와 드레인 패드의 커패시턴스 값뿐 아니라 나머지 외인성 파라미터 값 모두를 성공적으로 추출할 수 있다.

Keywords

References

  1. A. R. Alt, D. Marti, and C. R. Bolognesi, "Transistor modeling : robust small-signal equivalent circuit extraction in various HEMT technologies," IEEE Microwave Mag., vol. 14, no. 4, June 2013, pp. 83-101. https://doi.org/10.1109/MMM.2013.2248593
  2. R. L. Vaitkus, "Uncertainty in the values of GaAs MESFET equivalent circuit elements extracted from measured two-port scattering parameters," In Proc. IEEE Conf. High Speed Semiconductor Devices Circuits, Cornell Univ. Ithaca, NY, 1983, pp. 301-308.
  3. A. D. Patterson, V. F. Fusco, J. J. McKeown, and J. A. Stewart, "A systematic optimization strategy for microwave device modeling," IEEE Trans. Microwave Theory and Tech., vol. 41, no. 3, Mar. 1993, pp. 395-405. https://doi.org/10.1109/22.223737
  4. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory and Tech., vol. 36, no. 7, July 1988, pp. 1151-1159. https://doi.org/10.1109/22.3650
  5. A. Miras and E. Legros, "Very high-frequency small-signal equivalent circuit for short gatelength InP HEMT's," IEEE Trans. Microwave Theory and Tech., vol. 45, no. 7, July 1997, pp. 1018-1026. https://doi.org/10.1109/22.598436
  6. R. Tayrani, J. E. Gerber, T. Daniel, R. S. Pengelly, and U. L. Rohode, "A new and reliable direct parasitic extraction method for MESFETs and HEMTs," In Proc. 23rd European Microwave Conf., Madrid, Spain, 1993, pp. 451-453.
  7. M.-Y. Jeon, B.-G. Kim, Y.-J. Jeon, and Y.-H. Jeong, "A technique for extracting small-signal equivalent-circuit elements of HEMTs," IEICE Trans. Electron., vol. E82-C, no. 11, Nov. 1999, pp. 1968-1976.
  8. P. J. van Wijnen, H. R. Claessen, and E. A. Wolsheimer, "A new straightforward calibration and correction procedure for on-wafer high frequency S-parameter measurements (45MHz-18GHz)," In Proc. Bipolar Circuits Technology Meetings, Madrid, Spain, 1987, pp. 70-73.
  9. H. Cho and D. E. Burk, "A three-step method for the de-embedding of high-frequency S-parameter measurements," IEEE Trans. Electron Devices, vol. 38, no. 6, 1991, pp. 1371-1375. https://doi.org/10.1109/16.81628
  10. E. P. Vandamme, D. M. M. P. Schreurrs, and G. van Dinther, "Improve three-step de-embedding method to accurately account for the influence of pad parastics in silicon on-wafer RF teststructures," IEEE Trans. Electron Devices, vol. 48, no. 4, 2001, pp. 737-742. https://doi.org/10.1109/16.915712
  11. J. Cha, J. Cho, and S. Lee, "Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements," IEEE Trans. Electron Devices, vol. 55, no. 8, 2008, pp. 2195-2201. https://doi.org/10.1109/TED.2008.926752
  12. Y.-C. Bae, "A study on controlling chaos for Bonhoeffer-van der Pol oscillation model by small parameter perturbation," J. of the Korea Institute of Electronic Communication Sciences, vol. 1, no. 1, 2006, pp. 48-56.
  13. G.-C. Kim, "Design of voltage controlled oscillation for X-band radar using CSRR loaded microstrip line," J. of the Korea Institute of Electronic Communication Sciences, vol. 8, no. 9, 2013, pp. 1277-1283. https://doi.org/10.13067/JKIECS.2013.8.9.1277
  14. E.-J. Lim, G.-H. Han, and Y.-C. Rhee, "A design of K-band low phase noise oscillator by direct coupling of K-band dielectric resonator," J. of the Korea Institute of Electronic Communication Sciences, vol. 9, no. 1, 2014, pp. 17-23. https://doi.org/10.13067/JKIECS.2014.9.1.17
  15. M.-Y. Jeon and K.-T. Kim, "Hybrid balanced VCO suitable for sub-1V supply voltage operation," J. of the Korea Institute of Electronic Communication Sciences, vol. 7, no. 4, 2012, pp. 715-720.
  16. A. Hajimiri and T. H. Lee, "A general theory of phase noise in electrical oscillators," IEEE J. Solid-State Circuits, vol. 33, no. 2, Feb. 1998, pp. 179-194. https://doi.org/10.1109/4.658619
  17. A. Demir, A. Mehrotra, and J. Roychowdhury, "Phase noise in oscillators : a unifying theory and numerical methods for characterization," IEEE Trans. Circuits Syst.-I, vol. 47, May 2000, pp. 655-674.
  18. A. Caddemi, G. Crupi, and N. Donato, "Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30K," IEEE Trans. Instrumentation and Measurements, vol. 55, no. 2, Apr. 2006, pp. 465-470. https://doi.org/10.1109/TIM.2006.864248
  19. G. Crupi, D. Xiao, D. M. M. P. Schreurs, E. Limiti, A. Caddemi, W. D. Raedt, and M. Germain, "Accurate multibias equivalent-circuit extraction for GaN HEMTs," IEEE Trans. Microwave Theory and Tech., vol. 54, no. 10, Oct. 2006, pp. 3616-3622. https://doi.org/10.1109/TMTT.2006.882403
  20. G. Crupi, D. M. M. P. Schreurs, A. Raffo, A. Caddemi, and G. Vannini, "A new milimeter-wave samll-signal modeling approach for pHEMTs accounting for the output conductance time delay," IEEE Trans. Microwave Theory and Tech., vol. 56, no. 4, Apr. 2008, pp. 741-746. https://doi.org/10.1109/TMTT.2008.918147
  21. M. Berroth and R. Bosch, "Broad-band determination of the FET small-signal equivalent- circuit," IEEE Trans. Microwave Theory and Tech., vol. 38, no. 7, July 1990, pp. 891-895. https://doi.org/10.1109/22.55781
  22. M.-Y. Jeon, "A technique to extract extrinsic parameters of HEMTs," Microwave and Optical Technology Letters, vol. 44, no. 6, Mar. 2005, pp. 489-492. https://doi.org/10.1002/mop.20675