• Korean Journal of Materials Research
• /
• v.14 no.12
• /
• pp.846-850
• /
• 2004

NiCo silicide films have been fabricated from $300{\AA}-thick\;Ni_{1-x}Co_{x}(x=0.1\sim0.9)$ on Si-substrates by varying RTA(rapid thermal annealing) temperatures from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 sec. Sheet resistance, cross-sectional microstructure, and chemical composition evolution were measured by a four point probe, a transmission electron microscope(TEM), and an Auger depth profilemeter, respectively. For silicides of the all composition and temperatures except for $80\%$ of the Ni composition, we observed small sheet resistance of sub- $7\;{\Omega}/sq.,$ which was stable even at $1100^{\circ}C$. We report that our newly proposed NiCo silicides may obtain sub 50 nm-thick films by tunning the nickel composition and silicidation temperature. New NiCo silicides from NiCo-alloys may be more appropriate for sub-0.1${\mu}m$ CMOS process, compared to conventional single phase or stacked composit silicides.

• Korean Journal of Materials Research
• /
• v.13 no.2
• /
• pp.88-93
• /
• 2003

Co/Ti bilayer structure in Co salicide process helps to the improvement of device speed by lowering contact resistance due to the epitaxial growth of $CoSi_2$layers. We investigated the epitaxial growth and interfacial mass transport of $CoSi_2$layers formed from $150 \AA$-Co/Ti structure with two step rapid thermal annealing (RTA). The thicknesses of Ti layers were varied from 20 $\AA$ to 100 $\AA$. After we confirmed the appropriate deposition of Ti film even below $100\AA$-thick, we investigated the cross sectional microstructure, surface roughness, eptiaxial growth, and mass transportation of$ CoSi_2$films formed from various Ti thickness with a cross sectional transmission electron microscopy XTEM), scanning probe microscopy (SPM), X-ray diffractometery (XRD), and Auger electron depth profiling, respectively. We found that all Ti interlayer led to$ CoSi_2$epitaxial growth, while $20 \AA$-thick Ti caused imperfect epitaxy. Ti interlayer also caused Co-Ti-Si compounds on top of $CoSi_2$, which were very hard to remove selectively. Our result implied that we need to employ appropriate Ti thickness to enhance the epitaxial growth as well as to lessen Co-Ti-Si compound formation.

• Journal of Power System Engineering
• /
• v.11 no.1
• /
• pp.121-126
• /
• 2007

This study aims at investigating the effect of heat treatment conditions on the dry sliding wear behavior of thermally sprayed Ni-based self-flux alloy coatings. Ni-based self-flux alloy powders were sprayed onto a carbon steel substrate and then heat-treated at 700, 800, 900 and $1000^{\circ}C$ for 30 minutes in a vacuum furnace. Dry sliding wear tests were performed using sliding speed of 0.4 m/s and applied load of 6 N. AISI 52100 ball(diameter 8 mm) was used as counterparts. Microstructure and wear behavior of both as-sprayed and heat-treated Ni-based self-flux alloy coatings were studied using a scanning electron microscope(SEM), energy dispersive X-ray spectroscopy(EDX), electron probe micro-analysis(EPMA) and X-ray diffraction(XRD). It was revealed that microstructure and wear behavior of thermally sprayed Ni-based self-flux alloy coatings were much influenced by heat treatment conditions.

• Journal of Welding and Joining
• /
• v.29 no.2
• /
• pp.80-87
• /
• 2011

In this study, the friction stir spot welding (FSSW) of Mg alloy sheets has been tried using an apparatus devised with a CNC milling machine to give the precise control of joining condition including tool speed. The probe tool used is made of hard metal and composed of cylindrical shoulder and pin parts. The variation of morphologies formed after the friction stir spot welding depending on the plunge speed of the tool were investigated at each rpm of tool. The history of the temperature distribution and the vertical load induced during the spot welding with friction time were measured by using an Infrared Thermal Imager (THERMA CAMTM SC2000) and a loadcell located below the specimen fixture, respectively. Tensile-shear tests were also performed to evaluate the fracture load of welded specimens. In order to characterize the friction stir spot welding of Mg alloy sheets, the variation of the fracture load was discussed on micrographic observations, temperature distribution during the FSSW according to the plunge speeds of tool.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.156-157
• /
• 2008

반도체 소자 회로의 집적도가 높아짐에 따라 선폭이 감소하였고 고온 공정이 필요하게 되었다. 기존의 반도체 회로 배선 재료인 Al을 사용할 경우 소자의 속도가 느려져서 소자의 신뢰도가 떨어지고 고온공정에서의 문제가 발생되어 이를 해결하기 위한 차세대 배선 물질로 비저항이 낮은 Cu의 사용이 요구되고 있다. 하지만 Cu는 Si와의 확산이 잘 일어나기 때문에 그 사이에서 확산을 막아주는 확산방지막에 대한 필요성이 제기되었고 연구가 활발히 진행되고 있다. 본 논문에서는 Cu와 Si사이의 확산을 방지하기 위한 W-C-N 확산방지막을 물리적 기상 증착법(PVD)중 하나인 RF Magnetron Sputtering 방식을 사용하여 증착하였다. 고온 공정에서의 안정성을 알아보기 위해 $600^{\circ}C$ 부터 $900^{\circ}C$ 까지 $100^{\circ}C$ 단위로 열처리를 하였고 4-point probe 장치를 사용하여 열처리 온도에 따른 비저항 측정을 통해 W-C-N 확산방지막의 특성을 분석하였다.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.12 no.6
• /
• pp.3-9
• /
• 2013

Aluminum Oxide($Al_2O_3$) ceramics are excellent candidates for such applications due to their outstanding mechanical, thermal, and tribological properties. However, they are difficult to machine using conventional mechanical methods. Carbon fillers, such as carbon nanotubes(CNT) and graphene nanoplatelets(GNP)can be dispersed in a ceramic matrix to improve the mechanical and electrical properties. In this study, CNT and Graphene reinforced hybrid ceramic composites were fabricated using the spark plasma sintering method at a temperature of $1,500^{\circ}C$, pressure of 40 MPa, and soaking time of 10min. Besides this, the material properties such as microstructure, crystal structure, hardness, and electrical conductivity were analyzed using FE-SEM, XRD, Vickers, and the 4-point probe method. A micro machining test was carried out to compare the effects of the material properties and the machining performance for CNT and Graphene reinforced ceramic composites.

• Journal of the Korean institute of surface engineering
• /
• v.38 no.3
• /
• pp.89-94
• /
• 2005

We investigate the reaction stability of cobalt and nickel with side-wall materials of $SiO_2\;and\;Si_3N_4$. We deposited 15nm-Co and 15nm-Ni on $SiO_2(200nm)/p-type$ Si(100) and $Si_3N_4(70 nm)/p-type$ Si(100). The samples were annealed at the temperatures of $700\~1100^{\circ}C$ for 40 seconds with a rapid thermal annealer. The sheet resistance, shape, and composition of the residual materials were investigated with a 4-points probe, a field emission scanning electron microscopy, and an AES depth profiling, respectively. Samples of annealed above $1000^{\circ}C$ showed the agglomeration of residual metals with maze shape and revealed extremely high sheet resistance. The Auger depth profiling showed that the $SiO_2$ substrates had no residual metallic scums after $H_2SO_4$ cleaning while $Si_3N_4$ substrates showed some metallic residuals. Therefore, the $SiO_2$ spacer may be appropriate than $Si_3N_4$ for newly proposed Co/Ni composite salicide process.

• Journal of the Mineralogical Society of Korea
• /
• v.3 no.1
• /
• pp.44-57
• /
• 1990

Mineralogy of clay(Napseok) deposits in Yangsan area has been studied by the methods of field investigation and laboratory works including the polarizing microscopy, X-ray diffraction, infrared spectroscopy, thermal analysis, chemical analysis by electron micro-probe and atomic absorption spectrophotometer, and electron microscopy(SEM and TEM). The Napseok ores in both the Cheonbulsan and Yongcheon deposits consist mainly of sericite, pyrophyllite and quartz, with more or less tourmaline. The high temperature minerals such as corundum and dumortierite are found in the Cheonbulsan deposit, but not in the Yongcheon deposits. Dickite, nacrite, and halloysite are found in the Yongcheon deposit, but not in the Cheonbulsan deposit. The Napseok ores of the Yukwang deposit consist of sericite posits in the Yangsan area. Occurrence, chemistry and structural features of important minerals are described. Mineralogical data of sericite such as intensity raios and chemistry also support that the Napseok deposits of both the Chenobulsan and Yongcheon mines were formed at the higher temperature than those of the Yukwang mine. Presence of sericite-dickite-pyrophyllite ores in the Yongcheon deposit also suggests the lower temperautre than in the Cheonbulsan deposit.

• Journal of the Semiconductor & Display Technology
• /
• v.17 no.2
• /
• pp.71-75
• /
• 2018

In this study, we prepared OLED cell with ITO (Indium Tin Oxide) films grown on the glass substrate by facing targets sputtering. Before fabrication of OLED cells, we investigated properties of ITO films deposited at various sputtering conditions. To investigate properties of as-prepared films, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), hall-effect measurement. As a results, as-prepared ITO films have high transmittance of over 85 % in the visible range (300-800 nm) and a resistivity of under $10^{-4}$ (${\Omega}-cm$). Their resistivity increased as a function of oxygen gas flow and substrate temperature. OLED cell with ITO films were fabricated by thermal evpoeartor. Properties of OLEDs cell referring to properties of ITO films.

• Journal of the Korean Magnetic Resonance Society
• /
• v.23 no.3
• /
• pp.61-66
• /
• 2019

RNAs exhibit distinct structural and dynamic features required for proper function. The hydrogen-bonded imino protons of RNAs are a probe of the conformational transition and dynamic feature. MicroRNAs originate from primary transcripts containing hairpin structures. The levels of mature miR156 influence the flowering time of plants. To understand the molecular mechanism of biological function of $miR156:miR156^*$ duplex, we performed hydrogen exchange study on the model RNAs mimicking two phenotypes of $miR156:miR156^*$, $miR156:miR156^*$ (m-miR156a) and $miR156:miR156^*$ (m-miR156g) duplexes. This study found that the internal bulge of m-miR156a destabilized the neighboring base-pairs, whereas the bulge structure of m-miR156g did not affect the thermal stabilities of the neighboring base-pairs.