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http://dx.doi.org/10.3740/MRSK.2004.14.12.846

Characterization of Composite Silicide Obtained from NiCo-Alloy Films  

Song Ohsung (Department of Materials Science and Engineering, The University of Seoul)
Cheong Seonghwee (Department of Materials Science and Engineering, The University of Seoul)
Kim Dugjoong (Department of Materials Science and Engineering, The University of Seoul)
Publication Information
Korean Journal of Materials Research / v.14, no.12, 2004 , pp. 846-850 More about this Journal
Abstract
NiCo silicide films have been fabricated from $300{\AA}-thick\;Ni_{1-x}Co_{x}(x=0.1\sim0.9)$ on Si-substrates by varying RTA(rapid thermal annealing) temperatures from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 sec. Sheet resistance, cross-sectional microstructure, and chemical composition evolution were measured by a four point probe, a transmission electron microscope(TEM), and an Auger depth profilemeter, respectively. For silicides of the all composition and temperatures except for $80\%$ of the Ni composition, we observed small sheet resistance of sub- $7\;{\Omega}/sq.,$ which was stable even at $1100^{\circ}C$. We report that our newly proposed NiCo silicides may obtain sub 50 nm-thick films by tunning the nickel composition and silicidation temperature. New NiCo silicides from NiCo-alloys may be more appropriate for sub-0.1${\mu}m$ CMOS process, compared to conventional single phase or stacked composit silicides.
Keywords
silicide; alloy; cobalt; nickel; composite silicide;
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Times Cited By KSCI : 2  (Citation Analysis)
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