• Title/Summary/Keyword: TSV

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Effect of organic additives on Cu filling and surface of TSV for three dimensional packaging (3차원 실장을 위한 TSV의 Cu 충전 및 표면에 유기첨가제가 미치는 영향)

  • No, Myeong-Hun;Lee, Sun-Jae;Jeong, Jae-Pil
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.141-141
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    • 2013

  • 본 연구에서는 3차원 실장을 위한 TSV 충전 기술 중 Cu 전해도금에 대해 연구하였다. TSV에 Cu를 전해도금함에 있어서 도금액의 유기첨가제 유무에 따른 충전거동과 표면 도금 상태를 관찰하였다. 연구 결과 가속제, 억제제, 평활제로 구성 된 유기첨가제가 모두 첨가된 경우 도금 속가 가장 빨랐으며, 표면도 가장 고르게 형성된 것을 알 수 있었다.

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Overview of 3-D IC Design Technologies for Signal Integrity (SI) and Power Integrity (PI) of a TSV-Based 3D IC

  • Kim, Joohee;Kim, Joungho
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.2
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    • pp.3-14
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    • 2013

  • In this paper, key design issues and considerations for Signal Integrity(SI) and Power Integrity(PI) of a TSV-based 3D IC are introduced. For the signal integrity and power integrity of a TSV-based 3-D IC channel, analytical modeling and analysis results of a TSV-based 3-D channel and power delivery network (PDN) are presented. In addition, various design techniques and solutions which are to improve the electrical performance of a 3-D IC are investigated.

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Development of SiC Composite Solder with Low CTE as Filling Material for Molten Metal TSV Filling (용융 금속 TSV 충전을 위한 저열팽창계수 SiC 복합 충전 솔더의 개발)

  • Ko, Young-Ki;Ko, Yong-Ho;Bang, Jung-Hwan;Lee, Chang-Woo
    • Journal of Welding and Joining
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    • v.32 no.3
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    • pp.68-73
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    • 2014

  • Among through silicon via (TSV) technologies, for replacing Cu filling method, the method of molten solder filling has been proposed to reduce filling cost and filling time. However, because Sn alloy which has a high coefficient of thermal expansion (CTE) than Cu, CTE mismatch between Si and molten solder induced higher thermal stress than Cu filling method. This thermal stress can deteriorate reliability of TSV by forming defects like void, crack and so on. Therefore, we fabricated SiC composite filling material which had a low CTE for reducing thermal stress in TSV. To add SiC nano particles to molten solder, ball-typed SiC clusters, which were formed with Sn powders and SiC nano particles by ball mill process, put into molten Sn and then, nano particle-dispersed SiC composite filling material was produced. In the case of 1 wt.% of SiC particle, the CTE showed a lowest value which was a $14.8ppm/^{\circ}C$ and this value was lower than CTE of Cu. Up to 1 wt.% of SiC particle, Young's modulus increased as wt.% of SiC particle increased. And also, we observed cross-sectioned TSV which was filled with 1 wt.% of SiC particle and we confirmed a possibility of SiC composite material as a TSV filling material.

  • https://doi.org/10.5781/JWJ.2014.32.3.68 인용 PDF KSCI