• 제목/요약/키워드: SiC power device

검색결과 147건 처리시간 0.027초

유도 가열 시스템에서 SiC MOSFET과 GaN Transistor의 성능 비교를 통한 소자 적합성 분석 (Device Suitability Analysis by Comparing Performance of SiC MOSFET and GaN Transistor in Induction Heating System)

  • 차광형;주창태;민성수;김래영
    • 전력전자학회논문지
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    • 제25권3호
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    • pp.204-212
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    • 2020
  • In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs

  • Ke, Junji;Zhao, Zhibin;Sun, Peng;Huang, Huazhen;Abuogo, James;Cui, Xiang
    • Journal of Power Electronics
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    • 제19권4호
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    • pp.1054-1067
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    • 2019
  • This paper systematically investigates the influence of device parameters spread on the current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parameters spread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested under the same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore, comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variations of the device parameters. Based on the concept of the control variable method, the influence of each device parameter on the steady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, some screening suggestions of devices or chips before parallel-connection are provided in terms of different applications and different driver configurations.

고전압 Power IC 집적을 위한 4H-SiC CMOS 신뢰성 연구 (Reliability Analysis of 4H-SiC CMOS Device for High Voltage Power IC Integration)

  • 강연주;나재엽;김광수
    • 전기전자학회논문지
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    • 제26권1호
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    • pp.111-118
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    • 2022
  • 본 논문에서는 고전압 SiC Power 소자와 집적이 가능한 4H-SiC CMOS에 대해 연구하였다. SiC CMOS 소자 연구를 통해 고출력 SiC Power 소자와 함께 제작을 가능하게 함으로써 SiC 전력소자를 이용하는 고출력 시스템의 효율 및 비용면에서 우수한 성능을 기대할 수 있다. 따라서 4H-SiC 기판에서 CMOS를 설계한 후 TCAD 시뮬레이션을 통해 전기적 특성 및 고온 동작 신뢰성을 비교하였다. 특히 높은 온도에서 신뢰성 있는 동작을 위해 gate dielectric으로 HfO2를 변경함으로써 SiO2보다 열적 특성이 개선됨을 확인하였다.

에너지 저장장치를 위한 99% 고효율 2kW급 양방향 dc-dc 컨버터 설계 (Design of a 2kW Bidirectional DC-DC Converter with 99% Efficiency for Energy Storage System)

  • 이태영;조영훈;조병극
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2015년도 추계학술대회 논문집
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    • pp.85-86
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    • 2015
  • In this paper, the bidirectional DC-DC converter is composed of the 900V Silicon-Carbide(SiC) devices to get high efficiency. The 900V SiC device is better than a similar current rated traditional SiC device. it has a lower drain-source resistance and output capacitance. therefore it can reduce the switching and the conduction losses of the DC-DC converter. The experimental results verify the improvement of efficiency and usefulness of 900V SiC device.

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4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석 (Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs)

  • 강민석;문경숙;구상모
    • 한국전기전자재료학회논문지
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    • 제23권6호
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    • pp.436-439
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    • 2010
  • SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

전기자동차 파워 인버터용 전력반도체 소자의 발전: SiC 및 GaN (Advances in Power Semiconductor Devices for Automotive Power Inverters: SiC and GaN)

  • 김동진;방정환;김민수
    • 마이크로전자및패키징학회지
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    • 제30권2호
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    • pp.43-51
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    • 2023
  • 본 논문에서는 전기차 전력변환 시스템의 근간이 되는 전력반도체 소자의 발전 방향과 차세대 전력반도체 소자인 wide bandgap (WBG)의 특징에 관해 소개하고자 한다. 현재까지의 주류인 Si insulated gate bipolar transistor (IGBT)의 특징에 관해 소개하고, 제조사 별 Si IGBT 개발 방향에 대해 다루었다. 또한 대표적인 WBG 전력반도체 소자인 SiC metal-oxide-semiconductor field-effect transistor (MOSFET)이 가지는 특징을 고찰하여 종래의 Si IGBT 소자 대비 SiC MOSFET이 가지는 효용 및 필요성에 대해 서술하였다. 또한 현 시점에서의 GaN 전력반도체 소자가 가지는 한계 및 그로 인해 전기자동차용 전력변환모듈 용으로 사용하기에 이슈인 점을 서술하였다.

CoolSiCTM SiC MOSFET Technology, Device and Application

  • Ma, Kwokwai
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2017년도 전력전자학술대회
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    • pp.577-595
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    • 2017
  • ${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

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차세대 파워디바이스 SiC/GaN의 산업화 및 학술연구동향 (Commercialization and Research Trends of Next Generation Power Devices SiC/GaN)

  • 조만;구영덕
    • 에너지공학
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    • 제22권1호
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    • pp.58-81
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    • 2013
  • 탄화규소(SiC)나 질화갈륨(GaN)과 와이드갭 반도체를 이용한 전력소자의 생산기술이 크게 발전하여 그간 널리 사용되어 온 실리콘(Si) 전력소자와 비교하여 작동전압, 스위칭 속도 및 on-저항 등이 크게 향상되어 몇 개 기업은 제품화를 시작하였다. 내압 등 기술적 과제 등을극복하여 산업화를 하고자하는 움직임을 소개하고 아울러 연구동향도 분석한다.

Physical Modeling of SiC Power Diodes with Empirical Approximation

  • Hernandez, Leobardo;Claudio, Abraham;Rodriguez, Marco A.;Ponce, Mario;Tapia, Alejandro
    • Journal of Power Electronics
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    • 제11권3호
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    • pp.381-388
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    • 2011
  • This article presents the development of a model for SiC power diodes based on the physics of the semiconductor. The model is able to simulate the behavior of the dynamics of the charges in the N- region based on the stored charge inside the SiC power diode, depending on the working regime of the device (turn-on, on-state, and turn-off). The optimal individual calculation of the ambipolar diffusion length for every phase of commutation allows for solving the ambipolar diffusion equation (ADE) using a very simple approach. By means of this methodology development a set of differential equations that models the main physical phenomena associated with the semiconductor power device are obtained. The model is developed in Pspice with acceptable simulation times and without convergence problems during its implementation.