Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs
![]() |
Kang, Min-Seok
(Department of Electronic Materials Engineering, Kwangwoon University)
Moon, Kyoung-Sook (Department of Mathematics and Information, Kyungwon University) Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University) |
1 | A. Saha and J. A. Cooper, IEEE Trans. Eelctron. Devices 54, 2786 (2007). DOI |
2 | K. Matocha, Solid-State Electron. 52, 1631 (2008). DOI |
3 | S. Inaba, IEEE Trans. Eelctron. Devices 41, 2399(1994). DOI |
4 | T. Tamaki, G. G. Walden, Y. Sui, and J. A. Cooper,IEEE Trans. Eelctron. Devices 55, 1920 (2008). DOI |
5 | S.-H. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams, IEEE Eelctron. Device Lett.23, 321 (2002). DOI |
![]() |