Journal of Energy Engineering (에너지공학)

The Korean Society for Energy (한국에너지학회)
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Commercialization and Research Trends of Next Generation Power Devices SiC/GaN

차세대 파워디바이스 SiC/GaN의 산업화 및 학술연구동향

  • Cho, Mann (ReSEAT Program, Korea Institute of Science and Technology Information) ;
  • Koo, Young-Duk (Korea Institute of Science and Technology Information)
  • 조만 (한국과학기술정보연구원 ReSEAT프로그램) ;
  • 구영덕 (한국과학기술정보연구원)
  • Received : 2012.12.06
  • Accepted : 2013.02.28
  • Published : 2013.03.31
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Abstract

Recently, the technological progress in manufacturing power devices based on wide bandgap materials, for example, silicon carbide(SiC) or gallium nitride(GaN), has resulted in a significant improvement of the operating-voltage range and switching speed and/or specific on resistance compared with silicon power devices. This paper will give an overview of the status on The Next generation Power Devices such as SiC/GaN with a focus on commercialization and research.

탄화규소(SiC)나 질화갈륨(GaN)과 와이드갭 반도체를 이용한 전력소자의 생산기술이 크게 발전하여 그간 널리 사용되어 온 실리콘(Si) 전력소자와 비교하여 작동전압, 스위칭 속도 및 on-저항 등이 크게 향상되어 몇 개 기업은 제품화를 시작하였다. 내압 등 기술적 과제 등을극복하여 산업화를 하고자하는 움직임을 소개하고 아울러 연구동향도 분석한다.

Keywords

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