참고문헌
- D. Domes, W. Hofman, and J. Lutz, "A first loss evaluation using a vertical SiC-JFET and a conventional Si-IGBT in the bidirectional matrix converter switch topology," in European Conference on Power Electronics and Application, Sep. 2005.
- J. Biela, M. Schweizer, S. Waffler, and J. W. Kolar, “SiC versus si-evaluation of potentials for performance improvement of inverter and DC-DC converter system by SiC power semiconductors,” IEEE Trans. Ind. Electron, Vol. 58, No. 7, pp. 2872-2882, Jul. 2011. https://doi.org/10.1109/TIE.2010.2072896
- A. Zapico, I. Gabiola, S. Apinaniz, F. Santiago, A. Pujana, A. Rodriguez, and F. Briz, "SiC and Si transistors comparison in boost converter", in 2012 15th International Power Electronics and Motion Control Conference (EPE/PEMC), Sep. 2012.
- R. O. Nielsen, L. Torok, S. Munk-Nielsen, and F. Blaabjerg, "Efficiency and cost comparison of Si IGBT and SiC JFET isolated DC/DC converters," in Proceedings of the 39th Annual Conference of the IEEE Industrial Electronics Society (IECON 2013), pp. 695-699, Nov. 2013.
- K. Shirabe et al., “Efficiency comparison between Si -IGBT-based drive and GaN-based drive,” IEEE Trans. Ind Appl, Vol. 50, No. 1, pp. 566-572, Jan./Feb. 2014. https://doi.org/10.1109/TIA.2013.2290812
- A. Tuysuz, R. Bosshard, and J. Kolar, "Performance comparison of a GaN GIT and a Si IGBT for highspeed drive applications," in Proc. International Power Electronics Conf., pp. 1904-1911, May. 2014.
- A. Leon-Masich, H. Valderrama-Blavi, J. M. Bosque- Moncusi, and L. Martinez-Salamero, “Efficiency comparison between Si and SiC-based implementations in a high gain DC-DC boost converter,” IET Power Electron, Vol. 8, No. 6, pp. 869-878, Jun. 2015. https://doi.org/10.1049/iet-pel.2014.0591
- R. R. Duarte, G. F. Ferreira, M. A. D. Costa, and J. M. Alonso, "Performance comparison of Si and GaN transistors in a family of synchronous buck converters for LED lighting applications," in 2016 IEEE Industry Applications Society Annual Meeting, pp. 1-7, Oct. 2016.
- S. Acharya, X. She, R. Datta, M. H. Todorovic, and G. Mandrusiak, "Comparison of 1.7kV 450A SiC-MOSFET and Si-IGBT based modular three phase power block," in Proc. ECCE, pp. 5119-5125, Oct. 2017.
- J. Choi, D. Tsukiyama, and J. Rivas, "Comparison of SiC and eGaN devices in a 6.78 Mhz 2.2kW resonant inverter for wireless power transfer," in Proc. IEEE Energy Convers, Congr. Expo (ECCE), pp. 1-6, Sep. 2016.
- E. Gurpinar and A. Castellazzi, “Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs, and GaN HEMTs,” IEEE Trans. Power Electronics, Vol. 31, No. 10, pp. 7148-7160, Oct. 2016. https://doi.org/10.1109/TPEL.2015.2506400
- A. Taylor, J. Lu, L. Zhu, K. Bai, M. McAmmond, and A. Brown, "Comparison of SiC MOSFET-based and GaN HEMT-based high efficiency high-power-density 7.2 kW EV battery chargers," IET Power Electron, Vol. 11, No. 11, May. 2018.
- A. S. Abdelrahman, Z. Erdem, Y. Attia, and M. Z. Youssef, "Wide bandgap devices in electric vehicle converters: A performance survey," Canadian Journal of Electrical and Computer Engineering, Vol. 41, No. 1, pp. 45-54, 2018. https://doi.org/10.1109/cjece.2018.2807780
- GaN Systems, "GS66516T," [Online]. Available: https://gansystems.com/wp-content/uploads/2018/04/GS66516T-DS-Rev-180422.pdf.
- ROHM, "SCT3030AR," [Online]. Available: https://d1d2qsbl8m0m72.cloudfront.net/en/products/databook/datasheet/discrete/sic/mosfet/sct3030ar-e.pdf.