Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Reliability Analysis of 4H-SiC CMOS Device for High Voltage Power IC Integration

고전압 Power IC 집적을 위한 4H-SiC CMOS 신뢰성 연구

  • Kang, Yeon-Ju (Dept. of Electronic Engineering, Sogang University) ;
  • Na, Jae-Yeop (Dept. of Electronic Engineering, Sogang University) ;
  • Kim, Kwang-Soo (Dept. of Electronic Engineering, Sogang University)
  • Received : 2022.03.19
  • Accepted : 2022.03.24
  • Published : 2022.03.31
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Abstract

In this paper, we studied 4H-SiC CMOS that can be integrated with high-voltage SiC power devices. After designing the CMOS on a 4H-SiC substrate, we compared the electrical characteristics with the reliability of high temperature operation by TCAD simulation. In particular, it was confirmed that changing HfO2 as the gate dielectric for reliable operation at high temperatures improves the thermal properties compared to SiO2. By researching SiC CMOS devices, we can integrate high-power SiC power devices with SiC CMOS for excellent performance in terms of efficiency and cost of high-power systems.

본 논문에서는 고전압 SiC Power 소자와 집적이 가능한 4H-SiC CMOS에 대해 연구하였다. SiC CMOS 소자 연구를 통해 고출력 SiC Power 소자와 함께 제작을 가능하게 함으로써 SiC 전력소자를 이용하는 고출력 시스템의 효율 및 비용면에서 우수한 성능을 기대할 수 있다. 따라서 4H-SiC 기판에서 CMOS를 설계한 후 TCAD 시뮬레이션을 통해 전기적 특성 및 고온 동작 신뢰성을 비교하였다. 특히 높은 온도에서 신뢰성 있는 동작을 위해 gate dielectric으로 HfO2를 변경함으로써 SiO2보다 열적 특성이 개선됨을 확인하였다.

Keywords

Acknowledgement

This paper was supported by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE) (P0017011, HRD Program for Industrial Innovation), and then the IDEC (IC Design Education Center).

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