• Journal of the Semiconductor & Display Technology
• /
• v.17 no.1
• /
• pp.50-53
• /
• 2018

Cyclic measurement system using relay circuit for organic light emitting diode (OLED) was demonstrated. The OLED characterization such as current-voltage, impedance, and capacitance-voltage is performed in sequence, repetitively and automatically under full control of the personnel computer (PC) without changing the connection of cables. Owing to in situ degradation by cyclic measurement, the time dependence of the data can give good information on the reliability factor of the OLED devices. Therefore, both performance and reliability of the OLEDs can be evaluated, with no manual operation during the entire process.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.2
• /
• pp.82-86
• /
• 2019

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

• Korean Journal of Metals and Materials
• /
• v.47 no.5
• /
• pp.311-315
• /
• 2009

2-dimensional (2D) dopant profiling in semiconductor device was carried out by electron holography and scanning capacitance microscopy methods with the same multi-layered p-n junction sample. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.4
• /
• pp.114-118
• /
• 2021

In this research, the dimensional error of the measured specimen according to the measurement method was analyzed for the length, angle, radius of curvature and diameter using a projector which is used in industry. One-way analysis was performed on each data tested 30 times using a statistical technique. Through the experiment, it was found that an error occurred in each data when measuring the length and radius of curvature according to the measurement method, and the null hypothesis that no error occurred when measuring the angle and length was established. Based on this experimental data, the automatic measurement when measuring the projector causes less measurement error, so automatic measurement is recommended when measuring a small product. Also, an optimal measuring method is suggested for securing reliability on formulations of measurement automation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.6
• /
• pp.476-483
• /
• 2009

Cosmic ray is composed of nuclear particles moving at a light speed. The cosmic ray affects the performance and the reliability of semiconductor devices by ionizing the semiconductor material. In this study, the radiation effects of protons, electrons, and photons, which compose the cosmic ray, on the GOS(Geostationary Orbit Satellite) were evaluated using the Monte-Carlo N-Particle code. The GOS was chosen due to the comparatively long exposure to the cosmic ray as it stays in the geostationary orbit more than 10 years. As the absorbed dose of semiconductor from electrons is much larger than those of protons, photons, and the secondary radiation, most of the radiation exposure of the semiconductors in the GOS results from that of electrons. When we compare the calculated absorbed dose with the radio-resistance of semiconductor, the Intel 486 of the Intel company is not suitable for the GOS applications due to its low radio-resistance. However RH3000-20 of MIPS and Motorola 602/603e can be applied to the Satellite when the aluminium shield is thicker than 3 mm.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.2
• /
• pp.121-129
• /
• 2011

It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20nm technology. Also, FLASH controller to manage shrink effect leads to speed and current issues. In this paper, It will be introduced to solve cycling, retention and fail bit problems of sub-deep micron shrink such as Virtual negative read used in moving read, randomization. The characteristics of retention, cycling and program performance have 3 K per 1 year and 12.7 MB/s respectively. And device size is 179.32 $mm^2$ (16.79 mm ${\times}$ 10.68 mm) in 3 metal 26 nm CMOS.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.05a
• /
• pp.91-91
• /
• 2001

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.1
• /
• pp.31-39
• /
• 2001

W polymetal gate technology for giga bit DRAM are presented. Key module processes for polymetal gate are studied in detail. $W/WN_x/poly-silicon$ adopted for a word line of 256Mbit DRAM has good gate oxide integrity and junction leakage characteristics through full integration, which is comparable to those of conventional $WSi_x$/Poly-silicon gate process. These results undoubtedly show that $W/WN_x/poly-silicon$ is the strongest candidate as a word line for Giga bit DRAM.

• Journal of Semiconductor Engineering
• /
• v.2 no.1
• /
• pp.119-124
• /
• 2021

Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.2
• /
• pp.74-79
• /
• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.