JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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W Polymetal Gate Technology for Giga Bit DRAM

  • Published : 2001.03.01
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Abstract

W polymetal gate technology for giga bit DRAM are presented. Key module processes for polymetal gate are studied in detail. $W/WN_x/poly-silicon$ adopted for a word line of 256Mbit DRAM has good gate oxide integrity and junction leakage characteristics through full integration, which is comparable to those of conventional $WSi_x$/Poly-silicon gate process. These results undoubtedly show that $W/WN_x/poly-silicon$ is the strongest candidate as a word line for Giga bit DRAM.

Keywords

References

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