Journal of Semiconductor Engineering

The Institute of Semiconductor Engineers (반도체공학회)
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Proton Irradiation Effects on GaN-based devices

  • Keum, Dongmin (Metamaterial Electronic Device Research Center, Hongik University) ;
  • Kim, Hyungtak (School of Electrical and Electronic Engineering, Hongik University) ;
  • Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
  • Received : 2021.03.02
  • Accepted : 2021.03.22
  • Published : 2021.03.31
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Abstract

Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.

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References

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