References
- R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and M. S. Shur, "High-temperature performance of AlGaN/GaN HFET's on SiC substrates", IEEE Electron Device Lett., vol. 18, no. 10, pp. 492-494, Oct. 1997. https://doi.org/10.1109/55.624930
- O. Aktas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev, and H. Morkoc, "High-temperature characteristics of AlGaN/GaN modulation doped field-effect transistors", Appl. Phys. Lett., vol. 69, no. 25, pp. 3872-3874, Dec. 1996. https://doi.org/10.1063/1.117133
- J. Mararo, G. Nicolas, D. M. Nhut, S. Forestier, S. Rochette, O. Vendier, D. Langrez, J. Cazaux, and M. Feudale, "GaN for space application: Almost ready for flight", Int. J. Microw. Wirel., vol. 2, no. 1, pp. 121-133, Apr. 2010. https://doi.org/10.1017/S1759078710000206
- U. K. Mishra, P. Parikh, and Y. Wu, "AlGaN/GaN HEMTs-an overview of device operation and applications", Proc. IEEE, vol. 90, no. 6, pp. 1022-1031, Jun. 2002. https://doi.org/10.1109/JPROC.2002.1021567
- L. F. Eastman and U. K. Mishra, "The toughest yet [GaN Transistor]", IEEE spect., vol. 39, no. 5, pp. 29-33, May 2002. https://doi.org/10.1109/MSPEC.2002.1021952
- B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, and A. G. Baca, "DC and RF performance of proton-irradiated AlGaN/GaN high electron mobility transistors," Appl. Phys. Lett., vol. 79, no. 14, pp. 2196-2198, Oct. 2001. https://doi.org/10.1063/1.1408606
- X. Hu, A. P. Karmarkar, B. I. Jun, D. M. Fleetwood, R. D. Schrimpf, R. D. Geil, R. A. Welle , B. D. White, M. Bataiev, L. J. Brillson, and U. K. Mishra, "Proton-irradiation effects on Al-GaN/AlN/GaN high electron mobility transistors," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1791-1796, Dec. 2003. https://doi.org/10.1109/TNS.2003.820792
- L. Lv, L. G. Ma, Y. R. Cao, J. C. Zhang, W. Zhang, L. Li, S. R. Xu, X. H. Ma, X. T. Ren, and Y. Hao, "Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors," Microelectron. Reliab., vol. 51, no. 12, pp. 2168-2172, Dec. 2011. https://doi.org/10.1016/j.microrel.2011.04.022
- B. D. Weaver, T. J. Anderson, A. D. Koehler, J. D. Greenlee, J. K. Hite, D. I. Shahin, F. J. Kub, and K. D. Hobart, "On the radiation tolerance of AlGaN/GaN HEMTs", J. Solid-State Sci. Technol., vol. 5, no. 7, pp. Q208-Q212, Jun. 2016. https://doi.org/10.1149/2.0281607jss
- L. Lv, X. Ma, J. Zhang, Z. Bi, L. Liu, H. Shan, and Y. Hao, "Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions", IEEE Trans. Nucl. Sci., vol. 62, no. 1, pp. 300-305, Feb. 2015. https://doi.org/10.1109/TNS.2014.2374178
- J. Chen, Y. S. Puzyrev, R. Jiang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, A. R. Arehart, S. A. Ringel, P. Saunier, and C. Lee, "Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs", IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2423-2430, Dec. 2015. https://doi.org/10.1109/TNS.2015.2488650
- J. R. Srour, C. J. Marshall, and P. W. Marshall, "Review of Displacement Damage Effects in Silicon Devices", IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 653-670, Jun. 2003. https://doi.org/10.1109/TNS.2003.813197
- G. P. Summers, B. A. Burke, M. A. Xapsos, C. J. Dale, P. W. Marshall, and E. L. Petersen, "Displacement Damage In GaAs Structures", IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1221-1226, Dec. 1988. https://doi.org/10.1109/23.25443
- B. D. Weaver, P. A. Martin, J. B. Boos, and C. D. Cress, "Displacement damage effects in AlGaN/GaN high electron mobility transistors", IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3077-3080, Dec. 2012. https://doi.org/10.1109/TNS.2012.2224371
- L. Liu, C.-F. Lo, Y. Xi, Y. Wang, F. Ren, S. J. Pearton, H.-Y. Kim, J. Kim, R. C. Fitch, D. E. Walker Jr., K. D. Chabak, J. K. Gillespie, S. E. Tetlak, G. D. Via, A. Crespo, I. I. Kravchenko, "Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistor", J. Vac. Sci. Technol. B., vol. 31, no. 2, p. 022201, Jan. 2013. https://doi.org/10.1116/1.4788904
- B. D. White, M. Bataiev, S. H. Goss, X. Hu, A. Karmarkar, D. M. Fleetwood, R. D. Schrimpf, W. J. Schaff, and L. J. Brillson, "Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence", IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1934-1941, Dec. 2003. https://doi.org/10.1109/TNS.2003.821827
- D. Keum, H.-Y. Cha, and H. Kim, "Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs," IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 3362-3368, Dec. 2015. https://doi.org/10.1109/TNS.2015.2495209
- J. F. Ziegler and J. P. Biersack., "The stopping and range of ions in matter.," Treatise on heavy-ion science. Springer, Boston, MA, 1985. pp. 93-129.
- D. Keum and H. Kim, "Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation," ECS J. Solid State Sci. Technol., vol. 7, no. 9, pp. Q159-163, Aug. 2018. https://doi.org/10.1149/2.0021809jss
- O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undopoed and doped AlGaN/GaN heterostructures", J. Appl. Phys., vol. 78, no. 1, pp. 334-344, Jan. 2000. https://doi.org/10.1152/jappl.1995.78.1.334
- I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", J. Appl. Phys., vol. 86, no. 8, pp. 4520-4526, Oct. 1999. https://doi.org/10.1063/1.371396
- D. Keum, H.-K. Sung, and H. Kim, "Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation," IEEE Trans. Nucl. Sci., vol. 64, no. 1, Jan. 2017.
- P. Lagger, C. Ostermaier, G. Pobegen, and D. Pogany, "Towards understanding the origin of threshold voltage instability of AlGaN/GaN MISHEMTs", in Proc. IEEE Int. Electron Devices Meeting (IEDM), pp. 299-302, Dec. 2012.
- D. K. Schroder, "Oxide and Interface Trapped Charges, Oxide Thickness" Semiconductor Material and Device Characterization, 3rd ed. Hoboken, NJ, USA: Wiley, 2006, pp. 347-350.
- E. Patrick, M. E. Law, L. Liu, C. V. Cuervo, Y. Xi, F. Ren, and S. J. Pearton, "Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage", IEEE Trans. Nucl. Sci., vol. 60, no. 6, pp. 4103-4108, Dec. 2013. https://doi.org/10.1109/TNS.2013.2286115
- D. Keum and H. Kim, "Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AlGaN/GaN Recessed MISHFETs," J. Semicond. Technol. Sci., vol. 19, no. 2, pp. 214-219, Apr. 2019. https://doi.org/10.5573/JSTS.2019.19.2.214
- D. Keum and H. Kim, "Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors," Micromachines, vol. 10, p. 723, October 2019. https://doi.org/10.3390/mi10110723