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Measurement of 2-Dimensional Dopant Profiles by Electron Holography and Scanning Capacitance Microscopy Methods  

Park, Kyoung-Woo (Measurement & Analysis Team, National Nanofab Center)
Shaislamov, Ulugbek (Measurement & Analysis Team, National Nanofab Center)
Hyun, Moon Seop (Measurement & Analysis Team, National Nanofab Center)
Yoo, Jung Ho (Measurement & Analysis Team, National Nanofab Center)
Yang, Jun-Mo (Measurement & Analysis Team, National Nanofab Center)
Yoon, Soon-Gil (School of Nano Science and Technology, Chungnam National University)
Publication Information
Korean Journal of Metals and Materials / v.47, no.5, 2009 , pp. 311-315 More about this Journal
Abstract
2-dimensional (2D) dopant profiling in semiconductor device was carried out by electron holography and scanning capacitance microscopy methods with the same multi-layered p-n junction sample. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.
Keywords
semiconductor; 2-dimensional dopant profile; electron holography; scanning capacitance microscopy; reliability;
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