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http://dx.doi.org/10.22895/jse.2021.0002

Proton Irradiation Effects on GaN-based devices  

Keum, Dongmin (Metamaterial Electronic Device Research Center, Hongik University)
Kim, Hyungtak (School of Electrical and Electronic Engineering, Hongik University)
Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
Publication Information
Journal of Semiconductor Engineering / v.2, no.1, 2021 , pp. 119-124 More about this Journal
Abstract
Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.
Keywords
GaN; proton; irradiation; radiation hardness; degradation; space environment;
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