• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1463-1469
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• 2012

This paper has presented the influence of scaling theory on short channel effects of double gate(DG) MOSFET in subthreshold region. In the case of conventional MOSFET, to preserve constantly output characteristics,current and switching frequency have been analyzed based on scaling theory. To analyze the results of application of scaling theory for short channel effects of DGMOSFET, the changes of threshold voltage, drain induced barrier height and subthreshold swing have been observed according to scaling factor. The analytical potential distribution of Poisson equation already verified has been used. As a result, it has been observed that threshold voltage among short channel effects is grealty changed according to scaling factor. The best scaling theory for DGMOSFET has been explained as using modified scaling theory, applying weighting factor reflected the influence of two gates when scaling theory has been applied for channel length.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.982-988
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• 2012

This paper has presented the relation of scaling theory and threshold voltage of double gate(DG) MOSFET. In the case of conventional MOSFET, current and switching frequency have been analyzed based on scaling theory. To observe the possibility of application of scaling theory for threshold voltage of DGMOSFET, the change of threshold voltage has been observed and analyzed according to scaling theory. The analytical potential distribution of Poisson equation has been used, and this model has been already verified. To solve Poisson equation, charge distribution such as Gaussian function has been used. As a result, it has been observed that threshold voltage is grealty changed according to scaling factor and change rate of threshold voltages is traced for scaling of doping concentration in channel. This paper has explained for the best modified scaling theory reflected the influence of two gates as using weighting factor when scaling theory has been applied for channel length and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2267-2272
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• 2012

This study has presented the analysis of subthreshold swings based on scaling theory for double gate MOSFET. To solve the analytical potential distribution of Poisson's equation, we use Gaussian function to charge distribution. The scaling theory has been used to analyze short channel effect such as subthreshold swing degradation. These scaling factors for gate length, oxide thickness and channel thickness has been modified with the general scaling theory to include effects of double gates. We know subthreshold swing degradation is rapidly reduced when scaling factor of gate length is half of general scaling factor, and parameters such as projected range and standard projected deviation have greatly influenced on subthreshold swings.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.92-97
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• 2008

In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Journal of the Korean Applied Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2006

It is desirable to have an accurate expression on the temperature dependence of surface(or interfacial) tension ${\sigma}$, because most of the interfacial thermodynamic functions can be derived from it. There have been proposed several equations on the temperature dependence of the surface tension, ${\sigma}(T)$. Among them $E{\ddot{o}}tv{\ddot{o}}s$ equation and the one modified by Katayama, which is called Katayama equation, for improving accuracies of $E{\ddot{o}}tv{\ddot{o}}s$ equation close to critical points, have been most well-known. In this article Katayama equation is interpreted on the basis of the cell model to understand the nature of the equation. The cell model results in an expression very similar to Katayama equation. This implies that, although $E{\ddot{o}}tv{\ddot{o}}s$ and Katayama equations were obtained on the basis of experimental results, they have a sound theoretical background. The Katayama equation is also modified with the phase volume replaced with a critical scaling expression. The modified Katayama equation becomes a power-law equation with the exponent slightly different from the value obtained by critical-scaling theory. This implies that Katayama equation can be replaced by a critical-scaling equation which is proven to be accurate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.494-497
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• 2002

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model(QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll-off characteristics for threshold voltage of MOSFET with decreasing channel length, we know u value must be nearly 1 in the generalized scaling.

• Kyungpook Mathematical Journal
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• v.47 no.1
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• pp.133-150
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• 2007

In a development of efficient primal-dual interior-points algorithms for self-scaled convex programming problems, one of the important properties of such cones is the existence and uniqueness of "scaling points". In this paper through the identification of scaling points with the notion of "(metric) geometric means" on symmetric cones, we extend several well-known matrix inequalities (the classical L$\ddot{o}$wner-Heinz inequality, Ando inequality, Jensen inequality, Furuta inequality) to symmetric cones. We also develop a theory of spectral geometric means on symmetric cones which has recently appeared in matrix theory and in the linear monotone complementarity problem for domains associated to symmetric cones. We derive Nesterov-Todd inequality using the spectral property of spectral geometric means on symmetric cones.

• 한국연소학회:학술대회논문집
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• 2006.04a
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• pp.105-110
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• 2006

Many previous works have been performed to provide correlations of flame length, theoretically and experimentally. Most of these results studied were conducted in vertical turbulent flame with no coaxial air condition. The present study analyzes the flame length scaling with coaxial air. In turbulent hydrogen non-premixed jet flames with coaxial air, flame length scaling theoretically proposed so far has been related with the concept of a far-field equivalent source. At high coaxial air to fuel velocity ratio, $U_A/U_F$, however, this scaling theory has some difference with experimental flame length data. This difference is understood to be due to the fact that the theory is based on far-field notion, while the effect of coaxial air on jet flame occurs in the region near the nozzle exit. Therefore, we define effective jet density $P_{eff}$ involving the concept of near-field so that effective jet diameter can be extended to the near-field region. In this condition, we modify the correlation and compare with experimental data.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.275-278
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• 2002

As the gate lengths of MOSFETs are scaled down to sub-50nm regime, there are key issues to be considered in the device design. In this paper, we have investigated the characteristics of threshold voltage for MOSFET device. We have simulated the MOSFETs with gate lengths from 100nm to 30nm using generalized scaling. Then, we have known the device scaling limits for nano structure MOSFET. We have determined the threshold voltages using LE(Linear Extraction) method.