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Scaling theory to minimize the roll-off of threshold voltage for ultra fine MOSFET  

정학기 (군산대학교 전자정보공학부)
김재홍 (군산대학교 전자정보공학부)
고석웅 (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.7, no.4, 2003 , pp. 719-724 More about this Journal
Abstract
In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.
Keywords
halo doping; threshold voltage; generalized scaling; Van Dort Quantum Correction Model; direct tunneling;
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