• Title/Summary/Keyword: Power supply noise

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Noise Reduction Method for Particle Measurement System using Beta-ray Absorption Method (베타선 흡수법을 이용하는 미세먼지 측정시스템을 위한 잡음제거 방법)

  • Choi, Hun;Sohn, Sang-Wook;Bae, Hyeon-Deok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.11
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    • pp.1706-1712
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    • 2012
  • The Beta-ray absorption method (BAM) gives a good solution for measuring the mass concentration of atmospheric particles(PM10 and PM2.5). To determine particular matters (PM) concentration, a ratio of the number of detected beta-ray intensity passing through the clean filter and the dust-sampled filter is used. These intensity data measured in air pollution monitoring such as PM10 and PM2.5 usually contained the additive noise(thermal noise, power supply noise and etc.). Therefore, the estimation performance of mass concentration can be deteriorated by these noises. In this paper, we present a new noise reduction method that is essentially required to develope an automatic continuous PM monitoring system using beta-ray absorption method. By combining the block data averaging technique and curve fitting, in the proposed method, the additive noise can be reduced in the measured data. To evaluate the performance of the proposed method, computer simulations were performed with computer generated signals as the input.

An Integrated High Linearity CMOS Receiver Frontend for 24-GHz Applications

  • Rastegar, Habib;Ryu, Jee-Youl
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.595-604
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    • 2016
  • Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

Design of High Intensity Acoustic Test Facility to Generate Required Sound Pressure Level and Spectrum (설정 음압 및 스펙트럼 재현을 위한 음향 환경 시험 챔버의 기본 설계 변수 선정)

  • 김영기;우성현;김홍배;문상무;이상설
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2002.05a
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    • pp.867-872
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    • 2002
  • A high intensity acoustic test facility is constructed at Korea Aerospace Research Institute (KARI) by 2003. The reverberant chamber of the facility has a volume of 1,228 cubic meters and shall provide an acoustic environment of 152 dB over the frequency range of 25 Hz to 10,000 Hz. The facility consists of a large scaled reverberant chamber, acoustic power generation systems, gases nitrogen supply systems, and acoustic control systems. This paper describes how the basic parameters of a chamber and power generation systems are controlled to meet the requirement of the test. The volume of a reverberant chamber is controlled by the size of test objects and the reverberant characteristics of a chamber. The capacity of acoustic power generation systems is determined by the energy absorption of a chamber and the efficiency of acoustic modulators. Simple math is employed to calculate the required power of acoustic modulators. Moreover, the paper explains how the distribution of sound pressure level at low frequency is checked by analytical and numerical methods.

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A CMOS Impulse Radio Ultra-Wideband Receiver for Inner/Inter-chip Wireless Interconnection

  • Nguyen, Chi Nhan;Duong, Hoai Nghia;Dinh, Van Anh
    • Journal of IKEEE
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    • v.17 no.2
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    • pp.176-181
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    • 2013
  • This paper presents a CMOS impulse radio ultra-wideband (IR-UWB) receiver implemented using IBM 0.13um CMOS technology for inner/inter-chip wireless interconnection. The IR-UWB receiver is based on the non-coherent architecture which removes the complexity of RF architecture (such as DLL or PLL) and reduces power consumption. The receiver consists of three blocks: a low noise amplifier (LNA) with active balun, a correlator, and a comparator. Simulation results show the die area of the IR-UWB receiver of 0.2mm2, a power gain (S21) of 12.5dB, a noise figure (NF) of 3.05dB, an input return loss (S11) of less than -16.5dB, a conversion gain of 18dB, a NFDSB of 22. The receiver exhibits a third order intercept point (IIP3) of -1.3dBm and consumes 22.9mW of power on the 1.4V power supply.

Design Study for Power Integrity in Mobile Devices (모바일 기기의 전원 무결성을 위한 설계 연구)

  • Sa, Gi-Dong;Lim, Yeong-Seog
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.5
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    • pp.927-934
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    • 2019
  • Recently, mobile devices have evolved into small computers with various functions according to user requirements. Careful attention must be paid to the design of the power supply network for the stable operation of the application processor (AP), the wireless communication modem, the high performance camera, and the various interfaces of the mobile device to implement various functions of the mobile device. In this paper, we analyzed and verified the method of optimizing the design parameters such as the position, capacity, and number of decoupling capacitors to meet the target impedance required by the driver IC chip to ensure the stability of the power supply network of mobile devices that should be designed as wiring type due to mounting density limitation. The proposed wired power supply network design method can be applied to various applications including high-speed signal transmission line in addition to mobile applications.

Design of Bluetooth Receiver Front-end using High Gain Low Noise Amplifier and Microstrip Bandpass Filter (마이크로스트립 대역통과 여파기와 고이득 저잡음 증폭기를 이용한 블루투스 리시버 전반부 설계)

  • 손주호;최성열;윤창훈
    • Journal of Korea Multimedia Society
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    • v.6 no.2
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    • pp.352-359
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    • 2003
  • In this paper, we designed the bluetooth receiver using the microstrip bandpass filter and the high gain low noise amplifier with the 0.2$\mu\textrm{m}$ CMOS technology. A cascode inverter is adopted to implement the low noise amplifier and is one stage amplifier with a voltage reference and without the choke inductor. The designed 2.4GHz LNA was achieved a power gain of 18dB, a noise figure of 2.8dB, and the power consumption of 255mW at 2.5V power supply. Also, the microstrip receiver bandpass filter was designed that the center frequency was 2.45GHz, the bandwidth was 4% and the insert attenuation was -1.9dB. When the microstrip bandpass filter and LNA was simulated together the power gain was 16.3dB.

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Design of an Ultra Low Power CMOS 2.4 GHz LNA (초 저전력 CMOS 2.4 GHz 저잡음 증폭기 설계)

  • Jang, Yo-Han;Choi, Jae-Hoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.9
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    • pp.1045-1049
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    • 2010
  • In this paper, we proposed an ultra-low power low noise amplifier(LNA) using a TSMC 0.18 ${\mu}m$ RF CMOS process. To satisfy the low power consumption with high gain, a current-reused technique is utilized. In addition, a low bias voltage in the subthreshold region is utilized to achieve ultra low power characteristic. The designed LNA has the voltage gain of 13.8 dB and noise figure(NF) of 3.4 dB at 2.4 GHz. The total power consumption of the designed LNA is only 0.63 mW from 0.9 V supply voltage and chip occupies $1.1\;mm{\times}0.8\;mm$ area.

CMOS Low Noise Amplifier Design for IMT-2000 (IMT-2000용 CMOS 저잡음증폭기 설계)

  • 김신철;이상국
    • Proceedings of the IEEK Conference
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    • 2000.11a
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    • pp.333-336
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    • 2000
  • This paper describes a CMOS low noise amplifier (LNA) with bias current reusing architecture intended lot use in the front-end of IMT-2000 receiver. It has been implemented in a 0.35$\mu\textrm{m}$ CMOS process with two poly and four metal layers. In order to accuracy of simulation, we considered a bonding wire and a pad effect and used the measurements of capacitors and on-chip inductors which implemented in the same process. The LNA has a forward gain (S21) of 17 ㏈ and a noise fjgure of 1.26 ㏈. And it has a third-order intermodulation intercept point (IP3) of +3.15 ㏈m and a 1㏈ compression point (P1㏈) of -16 ㏈m, input referred, respectively. The power consumption is 19 ㎽ from a 3V supply.

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A Low-Noise and Small-Size DC Reference Circuit for High Speed CMOS A/D Converters

  • Hwang, Sang-Hoon;Song, Min-Kyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.1
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    • pp.43-50
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    • 2007
  • In a high-speed flash style or a pipelining style analog-to-digital converter (A/D converter), the DC reference fluctuation caused by external noises becomes serious, as the sampling frequency is increased. To reduce the fluctuations in conventional A/D converters, capacitors have been simply used, but the layout area was large. Instead of capacitors, a low-noise and small-size DC reference circuit based on transmission gate (TG) is proposed in this paper. In order to verify the proposed technique, we designed and manufactured a 6-bit 2GSPS CMOS A/D converter. The A/D converter is designed with a 0.18um 1-poly 6-metal n-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies the chip area of 977um by 1040um. The measured result shows that SNDR is 36.25 dB and INL/DNL is within 0.5LSB, even though the DC reference fluctuation is serious.

A CMOS Frequency Synthesizer for 5~6 GHz UNII-Band Sub-Harmonic Direct-Conversion Receiver

  • Jeong, Chan-Young;Yoo, Chang-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.3
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    • pp.153-159
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    • 2009
  • A CMOS frequency synthesizer for $5{\sim}6$ GHz UNII-band sub-harmonic direct-conversion receiver has been developed. For quadrature down-conversion with sub-harmonic mixing, octa-phase local oscillator (LO) signals are generated by an integer-N type phase-locked loop (PLL) frequency synthesizer. The complex timing issue of feedback divider of the PLL with large division ratio is solved by using multimodulus prescaler. Phase noise of the local oscillator signal is improved by employing the ring-type LC-tank oscillator and switching its tail current source. Implemented in a $0.18{\mu}m$ CMOS technology, the phase noise of the LO signal is lower than -80 dBc/Hz and -113 dBc/Hz at 100 kHz and 1MHz offset, respect-tively. The measured reference spur is lower than -70 dBc and the power consumption is 40 m W from a 1.8 V supply voltage.