• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.13-21
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• 2014

Technology for high power devices has made impressive progress in increasing the current density of power semiconductor, system module, and design optimization, which realize high power systems with heterogeneous functional integration. Depending on the performance development of high power semiconductor, packaging technology of high power device is urgently required for efficiency improvement of the device. Power device packaging must provide superior thermal management due to high operating temperature of power modules. Here we, therefore, review critical challenges of typical power electronics packaging today including core assembly processes, component materials, and reliability evaluation regulations.

• Journal of international Conference on Electrical Machines and Systems
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• 제2권4호
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• pp.441-446
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• 2013

A thermal model of power modules based on the physical dimension and thermal properties is proposed in this paper. The heat path in the power module is considered as a one-dimensional heat transfer in the model. The method of the parameters extraction for the model is given in the paper. With high speed and accuracy, the thermal model is suit for electrothermal simulation. The proposed model is verified by experimental results.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.15-23
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• 2015

Lead-free bonding has attracted significant attention for automotive power device packaging due to the upcoming environmental regulations. Silver (Ag) is one of the prime candidates for alternative of high Pb soldering owing to its superior electrical and thermal conductivity, low temperature sinterability, and high melting temperature after bonding. In this paper, the bonding technology by Ag paste was introduced. We classified into two Ag paste bonding according to applied pressure, and each bonding described in detail including recent studies.

• ETRI Journal
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• 제41권6호
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• pp.820-828
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• 2019

A highly reliable conductive adhesive obtained by transient liquid-phase sintering (TLPS) technologies is studied for use in high-power device packaging. TLPS involves the low-temperature reaction of a low-melting metal or alloy with a high-melting metal or alloy to form a reacted metal matrix. For a TLPS material (consisting of Ag-coated Cu, a Sn96.5-Ag3.0-Cu0.5 solder, and a volatile fluxing resin) used herein, the melting temperature of the metal matrix exceeds the bonding temperature. After bonding of the TLPS material, a unique melting peak of TLPS is observed at 356 ℃, consistent with the transient behavior of Ag₃Sn + Cu₆Sn₅ → liquid + Cu₃Sn reported by the National Institute of Standards and Technology. The TLPS material shows superior thermal conductivity as compared with other commercially available Ag pastes under the same specimen preparation conditions. In conclusion, the TLPS material can be a promising candidate for a highly reliable conductive adhesive in power device packaging because remelting of the SAC305 solder, which is widely used in conventional power modules, is not observed.

• 마이크로전자및패키징학회지
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• 제20권3호
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• pp.1-6
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• 2013

TSV는 그동안 3D IC 적층을 하는데 핵심 기술로 많이 연구되어 왔고, RC delay를 줄여 소자의 성능을 향상시키고, 전체 시스템 사이즈를 줄일 수 있는 기술로 각광을 받아왔다. 최근에는 TSV를 전기적 연결이 아닌 소자의 열관리를 위한 구조로 연구되고 있다. TSV를 이용한 liquid cooling 시스템 개발은 TSV 제조, TSV 디자인 (aspect ratio, size, distribution), 배선 밀도, microchannel 제조, sealing, 그리고 micropump 제조까지 풀어야 할 과제가 아직 많이 남아있다. 그러나 TSV를 이용한 liquid cooling 시스템은 열관리뿐 아니라 신호 대기시간(latency), 대역폭(bandwidth), 전력 소비(power consumption), 등에 크게 영향을 미치기 때문에 3D IC 적층 기술의 장점을 최대로 이용한 차세대 cooling 시스템으로 지속적인 개발이 필요하다.

• 마이크로전자및패키징학회지
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• 제17권4호
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• pp.27-33
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• 2010

We have successfully demonstrated a high-pin-count and thin embedded-LSI package to realize next generation's mobile terminals. The following three design key points were applied: (i) Using Cu posts, (ii) Using the coreless structure, (iii) Using a Cu plate as the ground plane. In order to quantitatively determine the contribution of the three points, the five-stage process for reducing the number of metal layers is described by means of the electrical simulation. The point-(i) and (ii) are effective from the viewpoint of the power integrity (PI); that is, these points play important roles in reducing the number of metal layers, and especially the point-(ii) contributes at least twice as the point-(i). The point-(iii) is not effective in the PI, but has a few effects on the signal integrity (SI). For reducing the number of metal layers, we should, at first, pay attention whether the PI characteristics fulfill the specification, and then we should confirm the SI characteristics.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.71-78
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• 2014

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

• 한국포장학회지
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• 제28권3호
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• pp.193-199
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• 2022

Sustainable energy supplies without the recharging and replacement of charge storage device have become increasingly important. Among various energy harvesters, the triboelectric nanogenerator (TENG) has attracted considerable attention due to its high instantaneous output power, broad selection of available materials, eco-friendly and inexpensive fabrication process, and various working modes customized for target applications. The TENG harvests electrical energy from wasted mechanical energy in the ambient environment. TENG devices are very likely to be used in next-generation renewable energy and energy harvesting. TENG devices have the advantage of being able to manufacture very simple power devices. In this experiment, various organic dielectrics and inorganic dielectrics were used to improve the open voltage of TENG, Among the various organic dielectrics, Teflon-based FEP, which has the highest electron affinity, showed the highest open voltage and Al electrode was fabricated on Teflon substrate by sputtering deposition process. And AAO (Anodized Aluminum Oxide) nanostructures were applied to maximize the specific surface area of the TENG device. The power generation of TENG within the acceleration level (0.25, 0.5, 1.0, 1.5 and 2 G) and the frequency range (5-120 Hz) of the domestic transport environment was up to 4 V.

• 마이크로전자및패키징학회지
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• 제24권1호
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• pp.17-25
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• 2017

Recently, research and application for a power module have been actively studied according to the increasing demand for the production of vehicles, smartphones and semiconductor devices. The power modules based on the transient liquid phase (TLP) technology for bonding of power semiconductor devices have been introduced in this paper. The TLP bonding has been widely used in semiconductor packaging industry due to inhibiting conventional Pb-base solder by the regulation of end of life vehicle (ELV) and restriction of hazardous substances (RoHS). In TLP bonding, the melting temperature of a joint layer becomes higher than bonding temperature and it is cost-effective technology than conventional Ag sintering process. In this paper, a variety of TLP bonding technologies and their characteristics for bonding of power module have been described.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 International Symposium
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• pp.109-119
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• 2003

o In order to start SIP Project .Marketing (& ASIC team) should present biz planning, schedule, device/SIP specs., in SIP TFT prior to request SIP development for package development project. .In order to prevent (PCB) revision, test, burn-in, & quality strategy should be fixed by SIP TFT (PE/Test, QA) prior to request for PKG development. .Target product price/cost, package/ test cost should be delivered and reviewed. o Minimum Information for PCB Design, Package Size, and Cost .(Required) package form factor: size, height, type (BGA, QFP), Pin count/pitch .(Estimated) each die size including scribe lane .(Estimated) pad inform. : count, pitch, configuration(in-line/staggered), (open) size .(Estimated) each device (I/O & Core) power (especially for DRAM embedded SIP) .SIP Block diagram, and net-list using excel sheet format o Why is the initial evaluation important\ulcorner .The higher logic power resulted in spec. over of DRAM Tjmax. This caused business drop longrightarrow Thermal simulation of some SIP product is essential in the beginning stage of SIP business planning (or design) stage. (i.e., DRAM embedded SIP) .When SIP is developed using discrete packages, the I/O driver Capa. of each device may be so high for SIP. Since I/O driver capa. was optimized to discrete package and set board environment, this resulted in severe noise problem in SIP. longrightarrow In this case, the electrical performance of product (including PKG) should have been considered (simulated) in the beginning stage of business planning (or design).