• Journal of the Korean Statistical Society
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• v.25 no.1
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• pp.111-122
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• 1996

A model for a system whose state changes continuously with time is introduced. It is assumed that the system is modeled by a Brownian motion with negative drift and an absorbing barrier at the origin. A repairman arrives according to a Poisson process and repairs the system according to an (s,S) policy, i.e., he increases the state of the system up to S if and only if the state is below s. A partial differential equation is derived for the distribution function of X(t), the state of the system at time t, and the Laplace-Stieltjes transform of the distribution function is obtained by solving the partial differential equation. For the stationary case the explicit expression is deduced for the distribution function of the stationary state of the system.

• Journal of the Korean Statistical Society
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• v.34 no.2
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• pp.85-98
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• 2005

A Bayesian analysis for the product of different powers of k independent Poisson rates, written ${\theta}$, is developed. This is done by considering a prior for ${\theta}$ that satisfies the differential equation due to Tibshirani and induces a proper posterior distribution. The Gibbs sampling procedure utilizing the rejection method is suggested for the posterior inference of ${\theta}$. The procedure is straightforward to specify distributionally and to implement computationally, with output readily adapted for required inference summaries. A salient feature of the procedure is that it provides a unified method for inferencing ${\theta}$ with any type of powers, and hence it solves all the existing problems (in inferencing ${\theta}$) simultaneously in a completely satisfactory way, at least within the Bayesian framework. In two examples, practical applications of the procedure is described.

• Communications of the Korean Mathematical Society
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• v.11 no.2
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• pp.367-375
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• 1996

Suppose the kernel function $\kappa$ belongs to $S(R^2)$ and is symmetric such that $ < \otimes x, \kappa >\geq 0$ for all $x \in S'(R)$. Let A be the class of functions f such that the function f is measurable on $S'(R)$ with $\int_{S'(R)}$\mid$f((I + tK)^{\frac{1}{2}}x$\mid$^2d\mu(x) < M$ for some $M > 0$ and for all t > 0, where K is the integral operator with kernel function $\kappa$. We show that the \lambda$-potential $G_Kf$ of f is a weak solution of $(\lambda I - \frac{1}{2} \tilde{\Xi}_{0,2}(\kappa))_u = f$.

• Membrane Journal
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• v.13 no.1
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• pp.37-46
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• 2003

The electrokinetic effect can be found in cases of the fluid flowing across the charged membrane micropores. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is taken into the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like pore is obtained via the Green's function. An explicit analytical expression for the flow-induced streaming potential is derived as functions of relevant physicochemical parameters. The influences of the electric double layer, the surface potential of the wall, and the charge condition of the pore wall upon the velocity profile as well as the streaming potential are examined. With increasing of either the electric double layer thickness or the surface potential, the average fluid velocity is entirely reduced, while the streaming potential increases.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.2
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• pp.407-412
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• 1990

Elastic modulus of unidirectional short fiber composite has theoretically derived with the consideration of Poisson's ratios of matrix and fiber. Unidirectional short fiber composite is modeled as an aggregate of grains developed by Kerner. Under the assumption of extra strain at fiber ends, the strain distribution along the fiber's length is determined, and the elastic modulus is derived from this distribution. For the consideration of effects of Poisson's ratio, Kerner's results for particulate composites are adapted as boundary conditions. The effect of differences in Poisson's ratio of fiber and matrix on elastic modulus is studied. Proposed equation shows a good agreement with experimental data of Halpin and Tock, et al.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.579-584
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.173-181
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• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.571-580
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• 1998

The numerical model that can describe the ignition of pseudospark discharge using hybrid fluid-particle(Monte Carlo )method has been developed. This model consists of the fluid expression for transport of electrons and ions and Poisson's equation in the electric field. The fluid equation determines the spatiotemporal dependence of charged particle densities and the ionization source term is computed using the Monte carlo method. This model has been used to study the evolution of a discharge in Argon at 0.5 torr, with an applied voltage if 1kV. The evolution process of the discharge has been divided into four phases along the potential distribution : (1) Townsend discharge, (2) plasma formation, (3) onset of hollow cathode effect, (4) plasma expansion. From the numerical results, the physical mechanisms that lead to the rapid rise in current associated with the onset of pseudospark could be identified.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.101-107
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• 1990

In this work, one-dimensional simulation is carried out for PT-GaAs Schottky barrier diodes with finite difference method. Shockley's semiconductor governing equations: Poisson equation and current continuity equation are discertized, and linearized by Newton-Raphson method. The linear system of equation is solved by Gaussian elimination method until convergence is achieved. The boundary condition for this equation is taken from thermionic emission-diffusion theory. Simulation is done for PT-GaAs epitaxial-layer Schottky barrier diodes. The claculated results of electron and potential distribution are shown. Simulation results show exellent agreement with experiments.

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.733-737
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• 2011

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.