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A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short-Channel Ion-Implanted Silicon MESFET's  

Jit, S. (Department of Electronics Engineering Institute of Technology Banaras Hindu University)
Morarka, Saurabh (Department of Electronics Engineering Institute of Technology Banaras Hindu University)
Mishra, Saurabh (Department of Electronics Engineering Institute of Technology Banaras Hindu University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.5, no.3, 2005 , pp. 173-181 More about this Journal
Abstract
A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.
Keywords
Bottom Potential; drain induced barrier lowering (DIBL); ion-implanted Si-MESFET's, threshold voltage;
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