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http://dx.doi.org/10.6109/jkiice.2012.16.3.579

Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET According to Channel Doping Concentration  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.3, 2012 , pp. 579-584 More about this Journal
Abstract
In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.
Keywords
doping distribution; Gaussian distribution; Poisson equation; DIBL; short channel effect; DGMOSFET;
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Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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