• Journal of the Korean Statistical Society
• /
• 제25권1호
• /
• pp.111-122
• /
• 1996

A model for a system whose state changes continuously with time is introduced. It is assumed that the system is modeled by a Brownian motion with negative drift and an absorbing barrier at the origin. A repairman arrives according to a Poisson process and repairs the system according to an (s,S) policy, i.e., he increases the state of the system up to S if and only if the state is below s. A partial differential equation is derived for the distribution function of X(t), the state of the system at time t, and the Laplace-Stieltjes transform of the distribution function is obtained by solving the partial differential equation. For the stationary case the explicit expression is deduced for the distribution function of the stationary state of the system.

• Journal of the Korean Statistical Society
• /
• 제34권2호
• /
• pp.85-98
• /
• 2005

A Bayesian analysis for the product of different powers of k independent Poisson rates, written ${\theta}$, is developed. This is done by considering a prior for ${\theta}$ that satisfies the differential equation due to Tibshirani and induces a proper posterior distribution. The Gibbs sampling procedure utilizing the rejection method is suggested for the posterior inference of ${\theta}$. The procedure is straightforward to specify distributionally and to implement computationally, with output readily adapted for required inference summaries. A salient feature of the procedure is that it provides a unified method for inferencing ${\theta}$ with any type of powers, and hence it solves all the existing problems (in inferencing ${\theta}$) simultaneously in a completely satisfactory way, at least within the Bayesian framework. In two examples, practical applications of the procedure is described.

• 대한수학회논문집
• /
• 제11권2호
• /
• pp.367-375
• /
• 1996

Suppose the kernel function $\kappa$ belongs to $S(R^2)$ and is symmetric such that $ < \otimes x, \kappa >\geq 0$ for all $x \in S'(R)$. Let A be the class of functions f such that the function f is measurable on $S'(R)$ with $\int_{S'(R)}$\mid$f((I + tK)^{\frac{1}{2}}x$\mid$^2d\mu(x) < M$ for some $M > 0$ and for all t > 0, where K is the integral operator with kernel function $\kappa$. We show that the \lambda$-potential $G_Kf$ of f is a weak solution of $(\lambda I - \frac{1}{2} \tilde{\Xi}_{0,2}(\kappa))_u = f$.

• 멤브레인
• /
• 제13권1호
• /
• pp.37-46
• /
• 2003

하전된 멤브레인 미세기공으로 유체가 흐르는 경우는 계면동전기 효과가 작용하게 된다. 비선형 Poisson-Boltzmann 전기장과 흐름에 의해 유발되는 전기장 사이의 정전상호작용을 운동방정식의 외부작용 힘으로 고려하였다. 유한차분법으로 정전위 분포를 우선 산출하고, 이어서 Green 함수로 슬릿형 기공에 대한 Navier-Stokes 식의 해석해를 구하였다. 계면동전기적 유동에 의한 흐름전위를 관련된 물리화학적 인자들의 함수로 유도되는 해석적인 명확한 표현으로 제시하였다. 전기이중층, 표면전위, 그리고 기공벽면의 하전조건의 영향에 따른 유속분포와 흐름전위 변화를 고찰하였다 계산결과, 전기이중층 두께나 표면전위가 증가함에 따라 평균유속은 감소하는 반면에 흐름전위는 증가하였다.

• 대한기계학회논문집
• /
• 제14권2호
• /
• pp.407-412
• /
• 1990

Elastic modulus of unidirectional short fiber composite has theoretically derived with the consideration of Poisson's ratios of matrix and fiber. Unidirectional short fiber composite is modeled as an aggregate of grains developed by Kerner. Under the assumption of extra strain at fiber ends, the strain distribution along the fiber's length is determined, and the elastic modulus is derived from this distribution. For the consideration of effects of Poisson's ratio, Kerner's results for particulate composites are adapted as boundary conditions. The effect of differences in Poisson's ratio of fiber and matrix on elastic modulus is studied. Proposed equation shows a good agreement with experimental data of Halpin and Tock, et al.

• 한국정보통신학회논문지
• /
• 제16권3호
• /
• pp.579-584
• /
• 2012

본 연구에서는 이중게이트(Double Gate; DG) MOSFET에서 발생하는 단채널효과 중 하나인 드레인유기장벽 감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자 한다. 드레인유도장벽감소 현상은 채널의 길이가 짧아질 때 드레인 전압이 소스측 전위장벽에 영향을 미쳐 장벽의 높이를 감소시키는 현상으로써 단채널에서 발생하는 매우 중요한 효과이다. 본 연구에서는 DIBL을 해석하기 위하여 이미 발표된 논문에서 타당성이 입증된 포아송 방정식의 해석학적 전위분포를 이용할 것이다. 이 모델은 특히 전하분포함수에 대하여 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였으며 소자 파라미터인 채널두께, 산화막두께, 도핑농도 등에 대하여 드레인유도장벽감소의 변화를 관찰하고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권3호
• /
• pp.173-181
• /
• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• 한국전기전자재료학회논문지
• /
• 제11권7호
• /
• pp.571-580
• /
• 1998

The numerical model that can describe the ignition of pseudospark discharge using hybrid fluid-particle(Monte Carlo )method has been developed. This model consists of the fluid expression for transport of electrons and ions and Poisson's equation in the electric field. The fluid equation determines the spatiotemporal dependence of charged particle densities and the ionization source term is computed using the Monte carlo method. This model has been used to study the evolution of a discharge in Argon at 0.5 torr, with an applied voltage if 1kV. The evolution process of the discharge has been divided into four phases along the potential distribution : (1) Townsend discharge, (2) plasma formation, (3) onset of hollow cathode effect, (4) plasma expansion. From the numerical results, the physical mechanisms that lead to the rapid rise in current associated with the onset of pseudospark could be identified.

• 대한전자공학회논문지
• /
• 제27권3호
• /
• pp.101-107
• /
• 1990

본 논문에서 유한차분법을 이용하여 Pt-GaAs Schottky Barrier Diode(SBD)를 일차원으로 simulation하였다. 반도체의 지배방정식인 포아송 방정식(poisson equation)과 전류연속 방정식)current continuity equation)을 이산화 시킨 다음 Newton-Raphson 방법으로 선형화시켜서 가우스 소거법으로 해가 수렴할 때까지 반복적으로 풀었다. 이 SBD의 해석에 필요한 경계조건은 열전자방출-확산이론(thermionic emission-diffusion theory)으로부터 Schottky Barrier의 경계조건을 취하였다. 에피층을 갖는 SBD를 모델링하여 인가전압에 따른 다이오드에서의 전위와 전자의 분포를 simulation 하였다. 전위에 따라 변하는 접속층을 고려하여 실험치와 잘 일치하는 결과를 얻었다.

• Journal of information and communication convergence engineering
• /
• 제9권6호
• /
• pp.733-737
• /
• 2011

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.